ETC AO4882

AO4882
40V Dual N-Channel MOSFET
General Description
The AO4882 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This is an all
purpose device that is suitable for use in a wide range of power conversion applications.
Features
VDS
ID (at VGS=10V)
40V
8A
RDS(ON) (at VGS=10V)
< 19mΩ
RDS(ON) (at VGS=4.5V)
< 27mΩ
D1
D2
Top View
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G1
G2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
C
Units
V
±20
V
6
A
IDM
40
Avalanche Current C
IAS
15
A
Avalanche energy L=0.1mH C
TA=25°C
Power Dissipation B
TA=70°C
EAS
11
mJ
Junction and Storage Temperature Range
TJ, TSTG
Pulsed Drain Current
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
1/5
Maximum
40
8
ID
TA=70°C
S2
2
PD
Symbol
t ≤ 10s
Steady-State
Steady-State
W
1.3
RθJA
RθJL
-55 to 150
Typ
48
74
32
°C
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
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AO4882
40V Dual N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.4
ID(ON)
On state drain current
VGS=10V, VDS=5V
40
TJ=55°C
5
±100
nA
2.4
V
15.4
19
22.5
29
VGS=4.5V, ID=4A
21
27
mΩ
1
V
2.5
A
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=8A
33
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.75
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
1.9
VGS=10V, ID=8A
Output Capacitance
Units
V
1
Zero Gate Voltage Drain Current
Coss
Max
40
VDS=40V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=0V, VDS=20V, f=1MHz
S
415
pF
112
pF
11
VGS=0V, VDS=0V, f=1MHz
pF
Ω
2.2
3.5
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
6.5
12
nC
Qg(4.5V) Total Gate Charge
3
6
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=20V, ID=8A
VGS=10V, VDS=20V, RL=2.5Ω,
RGEN=3Ω
1
mΩ
1.2
nC
1.1
nC
4
ns
3
ns
15
ns
tf
Turn-Off Fall Time
2
ns
trr
Body Diode Reverse Recovery Time
IF=8A, dI/dt=100A/µs
12.5
Qrr
Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs
3.5
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
2/5
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AO4882
40V Dual N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
10V
VDS=5V
4.5V
25
15
3.5V
ID(A)
ID (A)
20
15
10
3V
125°C
10
5
25°C
5
VGS=2.5V
0
0
0
1
2
3
4
0
5
50
2
3
4
5
6
Normalized On-Resistance
1.8
40
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
30
VGS=4.5V
20
10
VGS=10V
0
1.6
VGS=10V
ID=8A
1.4
17
5
2
VGS=4.5V10
1.2
ID=4A
1
0.8
0
3
6
9
12
15
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
60
1.0E+02
ID=8A
1.0E+01
50
40
1.0E+00
125°C
30
20
125°C
1.0E-01
1.0E-02
1.0E-03
10
25°C
25°C
1.0E-04
1.0E-05
0
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
3/5
IS (A)
RDS(ON) (mΩ
Ω)
40
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AO4882
40V Dual N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
600
10
VDS=20V
ID=8A
500
Capacitance (pF)
VGS (Volts)
8
6
4
2
400
300
200
Coss
100
0
Crss
0
0
2
4
6
Qg (nC)
Figure 7: Gate-Charge Characteristics
8
0
10
20
30
VDS (Volts)
Figure 8: Capacitance Characteristics
40
10000
100.0
1.0
10µs
1000
100µ
Power (W)
TA=25°C
RDS(ON)
limited
10.0
ID (Amps)
Ciss
1ms
10ms
TJ(Max)=150°C
TA=25°C
0.1
10s
100
10
DC
0.0
0.01
0.1
1
VDS (Volts)
10
100
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
0.1
0.01
PD
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
4/5
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AO4882
40V Dual N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
5/5
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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