AOK20N60 600V,20A N-Channel MOSFET General Description The AOK20N60 is fabricated using an advanced high voltage MOSFET process that is designed to deliverhigh levels of performance and robustness in popular AC-DC applications.By providing low RDS(on) , C iss and Crss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline powersupply designs. Features VDS ID (at VGS=10V) 700V@150℃ 20A RDS(ON) (at VGS=10V) < 0.37Ω D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C ID AOK20N60 600 Units V ±30 V 20 12 A Pulsed Drain Current C IDM Avalanche Current C IAR 6.5 A Repetitive avalanche energy C EAR 630 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-Case EAS dv/dt 1260 5 417 mJ V/ns W 3.3 -55 to 150 W/ oC °C 300 °C AOK20N60 40 0.5 0.3 Units °C/W °C/W °C/W PD TJ, TSTG TL Symbol RθJA RθCS RθJC 80 AOK20N60 600V,20A N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 700 V ID=250µA, VGS=0V 0.8 V/ oC VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=10A gFS Forward Transconductance VDS=40V, ID=10A VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM 3.8 4.5 nΑ V 0.29 0.37 Ω 25 S 1 V Maximum Body-Diode Continuous Current 20 A Maximum Body-Diode Pulsed Current 80 A DYNAMIC PARAMETERS Input Capacitance Ciss Coss ±100 3.2 µA Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 2448 3061 3680 pF VGS=0V, VDS=25V, f=1MHz 190 273 360 pF 13 22.8 35 pF VGS=0V, VDS=0V, f=1MHz 0.7 1.4 2.1 Ω 48 61 74 nC 14 18 22 nC 12 24 36 nC SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=480V, ID=20A tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=20A,dI/dt=100A/µs,VDS=100V Body Diode Reverse Recovery Time 0.69 VGS=10V, VDS=300V, ID=20A, RG=25Ω IF=20A,dI/dt=100A/µs,VDS=100V 57 ns 125 ns 128 ns 88 ns 384 480 580 8 10.5 13 ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=6.5A, VDD=150V, RG=25Ω, Starting TJ=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. AOK20N60 600V,20A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 40 VDS=40V 10V 6.5V 10 ID(A) ID (A) 30 -55°C 20 6V 125°C 1 10 VGS=5.5V 25°C 0 0.1 0 5 10 15 20 25 30 0 VDS (Volts) Fig 1: On-Region Characteristics 0.6 4 6 8 VGS(Volts) Figure 2: Transfer Characteristics 10 Normalized On-Resistance 3 0.5 RDS(ON) (Ω Ω) 2 VGS=10V 0.4 0.3 0.2 VGS=10V ID=10A 2.5 2 1.5 1 0.5 0 0.1 0 10 20 30 40 -100 50 -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.2 1.0E+02 40 1.0E+00 IS (A) BVDSS (Normalized) 1.0E+01 1.1 1 125°C 1.0E-01 1.0E-02 25°C 0.9 1.0E-03 0.8 1.0E-04 -100 -50 0 50 100 150 200 TJ (°C) Figure 5:Break Down vs. Junction Temparature 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 1.0 AOK20N60 600V,20A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 Ciss VDS=480V ID=20A Capacitance (pF) VGS (Volts) 12 9 6 1000 Coss Crss 100 3 0 10 0 20 40 60 80 Qg (nC) Figure 7: Gate-Charge Characteristics 100 0.1 100 RDS(ON) limited 10µs 100 25 20 10 ID (Amps) Current rating ID(A) 1 10 VDS (Volts) Figure 8: Capacitance Characteristics 15 10 100µs 1ms DC 1 10ms 0.1 5 TJ(Max)=150°C TC=25°C 0 0.01 0 25 50 75 100 125 150 TCASE (°C) (°C) Figure 9: Current De-rating (Note B) 1 10 100 1000 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area for AOK20N60 (Note F) Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.3°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOK20N60 (Note F) 1 10 AOK20N60 600V,20A N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds