AOK20S60 600V 20A α MOS TM Power Transistor General Description TM The AOK20S60 has been fabricated using the advanced αMOS high voltage process that is designed to deliver high levels of performance and robustness in switching applications.By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supplydesigns. Features VDS @ Tj,max 700V IDM 80A RDS(ON),max 0.199Ω Qg,typ 20nC Eoss @ 400V 4.9µJ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage Continuous Drain Current TC=25°C TC=100°C AOK20S60 600 Units V ±30 V 20 ID 14 A Pulsed Drain Current C IDM 80 Avalanche Current C IAR 3.4 A Repetitive avalanche energy C EAR 23 mJ Single pulsed avalanche energy G EAS 188 mJ TC=25°C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness H Peak diode recovery dv/dt Junction and Storage Temperature Range PD dv/dt TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J TL Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Symbol RθJA A Maximum Case-to-sink Maximum Junction-to-Case RθCS RθJC 266 W 2.1 100 20 -55 to 150 W/ oC 300 °C AOK20S60 Units 40 °C/W 0.5 0.47 °C/W °C/W V/ns °C AOK20S60 600V 20A α MOS TM Power Transistor Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units ID=250µA, VGS=0V, TJ=25°C 600 - - ID=250µA, VGS=0V, TJ=150°C 650 700 - V µA STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V - - 1 VDS=480V, TJ=150°C - 10 - IGSS Gate-Body leakage current VDS=0V, VGS=±30V - - ±100 VGS(th) Gate Threshold Voltage VDS=5V,ID=250µA 2.8 3.4 4.1 nΑ V RDS(ON) Static Drain-Source On-Resistance VSD Diode Forward Voltage VGS=10V, ID=10A, TJ=25°C - 0.18 0.199 Ω VGS=10V, ID=10A, TJ=150°C - 0.48 0.53 Ω IS=10A,VGS=0V, TJ=25°C - 0.84 - V IS Maximum Body-Diode Continuous Current - - 20 A ISM Maximum Body-Diode Pulsed CurrentC - - 80 A - 1038 - pF - 68 - pF - 56.6 - pF - 176.5 - pF VGS=0V, VDS=100V, f=1MHz - 2.1 - pF VGS=0V, VDS=0V, f=1MHz - 9.3 - Ω - 19.8 - nC - 4.6 - nC DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Co(er) Effective output capacitance, energy related H Crss Effective output capacitance, time related I Reverse Transfer Capacitance Rg Gate resistance Co(tr) VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0 to 480V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg VGS=10V, VDS=480V, ID=10A Qgs Gate Source Charge Qgd Gate Drain Charge - 7.6 - nC tD(on) Turn-On DelayTime - 27.5 - ns tr Turn-On Rise Time - 32 - ns tD(off) Turn-Off DelayTime - 87.5 - ns tf trr Turn-Off Fall Time - 30 - ns IF=10A,dI/dt=100A/µs,VDS=400V VGS=10V, VDS=400V, ID=10A, RG=25Ω Body Diode Reverse Recovery Time Peak Reverse Recovery Current - 350 - ns Irm IF=10A,dI/dt=100A/µs,VDS=400V - 27 - Qrr Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/µs,VDS=400V - 5.7 - A µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. L=60mH, IAS=2.5A, VDD=150V, Starting TJ=25°C H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS. I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS. J. Wavesoldering only allowed at leads. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. AOK20S60 600V 20A α MOS TM Power Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 40 10V 10V 35 25 30 7V 25 6V 7V 6V ID (A) ID (A) 20 20 5.5V 15 10 VGS=4.5V 15 5.5V 10 5V 5 5V 5 VGS=4.5V 0 0 0 5 10 15 0 20 5 10 15 20 VDS (Volts) Figure 2: On-Region Characteristics@125°C VDS (Volts) Figure 1: On-Region Characteristics@25°C 100 0.5 VDS=20V 0.4 10 -55°C RDS(ON) (Ω ) ID(A) 125°C 1 VGS=10V 0.3 0.2 25°C 0.1 0.1 0.0 0.01 2 4 6 8 0 10 20 30 40 50 ID (A) Figure 4: On-Resistance vs. Drain Current and Gate Voltage VGS(Volts) Figure 3: Transfer Characteristics 1.2 3 2.5 VGS=10V ID=10A BVDSS (Normalized) Normalized On-Resistance 10 2 1.5 1 1.1 1 0.9 0.5 0 -100 -50 0 50 100 150 Temperature (°C) Figure 5: On-Resistance vs. Junction Temperature 200 0.8 -100 -50 0 50 100 150 200 TJ (oC) Figure 6: Break Down vs. Junction Temperature AOK20S60 600V 20A α MOS TM Power Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 1.0E+02 1.0E+01 125°C 12 VDS=480V ID=10A 25°C 1.0E-01 VGS (Volts) IS (A) 1.0E+00 1.0E-02 9 6 1.0E-03 3 1.0E-04 1.0E-05 0 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 7: Body-Diode Characteristics (Note E) 0 5 10 15 20 25 30 Qg (nC) Figure 8: Gate-Charge Characteristics 10000 10 8 1000 Eoss(uJ) Capacitance (pF) Ciss Coss 100 4 Crss 10 2 0 1 0 100 200 300 400 500 VDS (Volts) Figure 9: Capacitance Characteristics 600 100 RDS(ON) limited 10 ID (Amps) Eoss 6 10µs 100µs 1 DC 1ms 10ms 0.1 TJ(Max)=150°C TC=25°C 0.01 1 10 100 VDS (Volts) Figure 11: Maximum Forward Biased Safe Operating Area for AOK20S60 (Note F) 1000 0 100 200 300 400 VDS (Volts) Figure 10: Coss stored Energy 500 600 AOK20S60 600V 20A α MOS TM Power Transistor 200 25 160 20 Current rating ID(A) EAS(mJ) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 80 40 15 10 5 0 0 25 50 75 100 125 TCASE (°C) Figure 12: Avalanche energy 150 175 0 25 50 75 100 125 TCASE (°C) Figure 13: Current De-rating (Note B) 150 Zθ JC Normalized Transient Thermal Resistance 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.47°C/W 0.1 PD 0.01 Ton T Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width (s) Figure 14: Normalized Maximum Transient Thermal Impedance for AOK20S60 (Note F) 1 10 AOK20S60 600V 20A α MOS TM Power Transistor Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds