AON2420 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Features 30V DS D (at VGS=10V) 8A RDS(ON) (at VGS =10V) < 11.7mΩ RDS(ON) (at VGS =4.5V) < 17.5mΩ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current G Pulsed Drain Current VDS Spike Power Dissipation A C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D 1/5 36 Steady-State V W 1.8 TJ, TSTG Symbol t ≤ 10s A 2.8 PD Junction and Storage Temperature Range V 32 VSPIKE TA=70°C ±20 6 IDM 100ns TA=25°C Units V 8 ID TA=100°C Maximum 30 RθJA -55 to 150 Typ 37 66 °C Max 45 80 Units °C/W °C/W www.freescale.net.cn AON2420 30V N-Channel AlphaMOS Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA RDS(ON) Static Drain-Source On-Resistance 5 1.2 VGS=10V, ID=8A TJ=125°C VGS=4.5V, ID=6A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) 1.8 µA ±100 nA 2.2 V 9.6 11.7 13 15.8 13.6 17.5 mΩ 1 V 3.5 A 41 0.7 mΩ S 552 pF 227 pF 28 pF 3.4 4.8 Ω 8.9 12 nC 4.3 5.8 nC 1.5 nC Gate Drain Charge 1.7 nC Turn-On DelayTime 4.8 ns 3.3 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Qrr VGS=10V, VDS=15V, ID=8A 1.7 Units V 1 TJ=55°C VDS=5V, ID=8A Max 30 VDS=30V, VGS=0V IDSS Coss Typ VGS=10V, VDS=15V, RL=1.9Ω, RGEN=3Ω 18.5 ns Turn-Off Fall Time 4.0 ns IF=8A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs 13.2 ns nC 3.2 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. B. The Power dissipation PD is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. 2/5 www.freescale.net.cn AON2420 30V N-Channel AlphaMOS TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 60 10V VDS=5V 50 4.5V 60 40 ID(A) ID (A) 4V 40 30 3.5V 125°C 20 25°C 20 VGS=3.0V 10 0 0 0 1 2 3 4 0 5 2 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 20 Normalized On-Resistance 1.6 16 RDS(ON) (mΩ Ω) 1 VGS=4.5V 12 8 VGS=10V 4 VGS=10V ID=8A 1.4 1.2 VGS=4.5V ID=6A 1 0.8 0 0 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 5 30 ±20 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+01 25 ID=8A 1.0E+00 20 1.0E-01 IS (A) RDS(ON) (mΩ Ω) 125°C 15 125°C 1.0E-02 10 25°C 1.0E-03 25°C 5 1.0E-04 0 1.0E-05 0 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/5 2 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON2420 30V N-Channel AlphaMOS TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 800 VDS=15V ID=8A 8 Ciss Capacitance (pF) VGS (Volts) 600 6 4 400 Coss 200 2 Crss 0 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 10 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 10000 100.0 TA=25°C 10µs 10µs RDS(ON) limited 1000 100µs 1ms 1.0 DC 0.1 10ms Power (W) 10.0 ID (Amps) 30 TJ(Max)=150°C TC=25°C 100 10 0.0 0.01 0.1 1 VDS (Volts) 10 1 100 0.00001 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.1 Pulse Width (s) 10 1000 30 11: Single Pulse Power Rating Junction-to-Ambient Figure ±20 (Note H) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=80°C/W 0.1 Single Pulse 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note H) 4/5 www.freescale.net.cn AON2420 30V N-Channel AlphaMOS Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 5/5 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.freescale.net.cn