AON7401 30V P-Channel MOSFET General Description The AON7401 uses advanced trench technology to provide excellent RDS(ON) , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Features VDS -30V ID (at VGS=-10V) -35A RDS(ON) (at VGS=-10V) < 14mΩ RDS(ON) (at VGS=-6V) < 17mΩ D Top View 1 8 2 7 3 6 4 5 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 1/5 -12 29 Steady-State Steady-State W 3.1 RθJA RθJL W 2 TJ, TSTG Symbol t ≤ 10s A 12 PDSM TA=70°C A -9.7 PD TC=100°C V -80 IDSM TA=70°C ±25 -23 IDM TA=25°C Continuous Drain Current Units V -35 ID TC=100°C Maximum -30 -55 to 150 Typ 30 60 3.5 °C Max 40 75 4.2 Units °C/W °C/W °C/W www.freescale.net.cn AON7401 30V P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Conditions Min ID=-250µA, VGS=0V -30 -1 TJ=55°C -5 VDS=0V, VGS= ±25V ±100 Gate Threshold Voltage VDS=VGS ID=-250µA -1.7 ID(ON) On state drain current VGS=-10V, VDS=-5V -80 VGS=-10V, ID=-9A 19 VGS=-6V, ID=-7A 12.9 17 VDS=-5V, ID=-9A 27 Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Rg Gate resistance -0.7 2060 VGS=0V, VDS=-15V, f=1MHz Units µA nA V A 16 gFS Reverse Transfer Capacitance -3 14 Static Drain-Source On-Resistance Output Capacitance -2.2 11 RDS(ON) Crss Max V VDS=-30V, VGS=0V VGS(th) Coss Typ mΩ mΩ S -1 V -25 A 2600 pF 370 pF 295 pF VGS=0V, VDS=0V, f=1MHz 2.4 3.6 Ω 30 39 nC VGS=-10V, VDS=-15V, ID=-9A 4.6 nC 10 nC SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-9A, dI/dt=500A/µs 14 Qrr Body Diode Reverse Recovery Charge IF=-9A, dI/dt=500A/µs 35 VGS=-10V, VDS=-15V, RL=1.6Ω, RGEN=3Ω 11 ns 9.4 ns 24 ns 12 ns 18 ns nC A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RqJA is the sum of the thermal impedence from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/5 www.freescale.net.cn AON7401 30V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 80 -10V VDS=-5V -6V -5V 60 60 -ID(A) -ID (A) -4.5V 40 40 -4V 125°C 20 20 25°C VGS=-3.5V 0 0 0 1 2 3 4 1 5 3 4 5 6 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 16 Normalized On-Resistance 1.8 VGS=-6V 14 RDS(ON) (mΩ Ω) 2 12 10 VGS=-10V 8 6 VGS=-10V ID=-9A 1.6 1.4 1.2 VGS=-6V ID=-7A 1 17 5 2 10 0.8 0 5 10 15 20 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 30 1.0E+01 ID=-9A 1.0E+00 40 20 125°C IS (A) RDS(ON) (mΩ Ω) 25 125° 25° 25°C 1.0E-02 10 1.0E-03 5 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/5 1.0E-01 15 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON7401 30V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3200 10 VDS=-15V ID=-9A 2800 2400 Capacitance (pF) -VGS (Volts) 8 6 4 Ciss 2000 1600 1200 Coss 800 2 400 0 Crss 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 30 0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 10000 1000.0 TA=25° 10.0 10µs 100µs RDS(ON) limited 1ms 1.0 10ms 100ms 10s TJ(Max)=150°C TA=25°C 0.1 1000 Power (W) -ID (Amps) 100.0 100 10 DC 1 0.0 0.00001 0.01 0.1 1 -VDS (Volts) 10 0.001 0.1 10 1000 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/5 www.freescale.net.cn AON7401 30V P-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 5/5 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.freescale.net.cn