SHENZHENFREESCALE AON1611

AON1611
20V P-Channel MOSFET
General Description
The AON1611 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low R DS(ON) . This device is ideal for load switch and battery protection applications.
Features
VDS
-20V
ID (at VGS=-4.5V)
-4A
RDS(ON) (at VGS =-4.5V)
< 58mΩ
RDS(ON) (at VGS =-2.5V)
< 76mΩ
RDS(ON) (at VGS =-1.8V)
< 98mΩ
RDS(ON) (at VGS =-1.5V)
< 120mΩ
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current G
VGS
TA=25°C
Pulsed Drain Current C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
1/5
Steady-State
A
1.8
W
1.15
TJ, TSTG
Symbol
t ≤ 10s
V
-3
PD
TA=70°C
±8
-16
IDM
TA=25°C
Power Dissipation A
Units
V
-4
ID
TA=70°C
Maximum
-20
RθJA
-55 to 150
Typ
56
88
°C
Max
70
110
Units
°C/W
°C/W
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AON1611
20V P-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-20
Typ
Max
Units
V
VDS=-20V, VGS=0V
-1
TJ=55°C
-5
µA
±10
µA
-0.6
-0.9
V
46
58
64.5
80
VGS=-2.5V, ID=-3A
58
76
VGS=-1.8V, ID=-2A
74
98
mΩ
VGS=-1.5V, ID=-1A
88
120
mΩ
Forward Transconductance
VDS=-5V, ID=-4A
15
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±8V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250µA
-0.3
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-16
VGS=-4.5V, ID=-4A
TJ=125°C
RDS(ON)
gFS
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(4.5V)
Total Gate Charge
Qgs
Gate Source Charge
A
-0.66
mΩ
S
-1
V
-2.5
A
550
pF
93
pF
64
pF
12
Ω
7
VGS=-4.5V, VDS=-10V, ID=-4A
mΩ
10
nC
1
nC
Qgd
Gate Drain Charge
1.8
nC
tD(on)
Turn-On DelayTime
15
ns
tr
Turn-On Rise Time
33
ns
tD(off)
Turn-Off DelayTime
50
ns
tf
Turn-Off Fall Time
43
ns
16
ns
nC
trr
Qrr
VGS=-4.5V, VDS=-10V, RL=2.5Ω,
RGEN=3Ω
IF=-4A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs
6.5
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
2/5
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AON1611
20V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
20
-4.5V
-2.5V
VDS=-5V
15
15
-ID(A)
-ID (A)
-1.8V
10
10
125°C
-1.5V
5
5
25°C
VGS=-1.0V
0
0
0
1
2
3
4
0
5
1
1.5
2
2.5
3
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
120
1.6
Normalized On-Resistance
VGS=-1.5V
100
VGS=-1.8V
RDS(ON) (mΩ
Ω)
0.5
80
VGS=-2.5V
60
40
VGS=-4.5V
20
VGS=-4.5V
ID=-4A
1.4
VGS=-2.5V
ID=-3A
VGS=-1.8V
ID=-2A
1.2
VGS=-1.5V
ID=-1A
1
0.8
0
0
0
2
4
6
8
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+01
140
ID=-4A
120
-IS (A)
1.0E+00
RDS(ON) (mΩ
Ω)
100
125°C
80
1.0E-02
25°C
60
1.0E-03
40
25°C
20
1.0E-04
1.0E-05
0
2
3
4
5
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
3/5
125°C
1.0E-01
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON1611
20V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
1000
VDS=-10V
ID=-4A
800
Capacitance (pF)
-VGS (Volts)
4
3
2
400
1
200
0
0
0
2
4
6
Qg (nC)
Figure 7: Gate-Charge Characteristics
Coss
Crss
8
0
5
10
15
-VDS (Volts)
Figure 8: Capacitance Characteristics
20
200
100.0
10µs 10µs
100µs
RDS(ON)
limited
1.0
1ms
0.1
10ms
100ms
1s
TJ(Max)=150°C
TA=25°C
TJ(Max)=150°C
TA=25°C
160
DC
Power (W)
10.0
-ID (Amps)
Ciss
600
120
80
40
0.0
0
0.01
0.1
1
-VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note H)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
RθJA=110°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note H)
4/5
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AON1611
20V P-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
5/5
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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