AON4421 P-Channel Enhancement Mode Field Effect Transistor General Description The AON4421 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This device is suitable for use as a load switch. Features VDS -30V ID (at VGS=-10V) -8A RDS(ON) (at VGS=-10V) < 26mΩ RDS(ON) (at VGS=-4.5V) < 34mΩ D DFN 3x2 Top View Bottom View Pin 1 D D D D D D G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current C Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 1/5 Steady-State Steady-State A 2.5 W 1.6 TJ, TSTG Symbol t ≤ 10s V -60 PD TA=70°C ±20 -6 IDM TA=25°C B Units V -8 ID TA=70°C Maximum -30 RθJA RθJL °C -55 to 150 Typ 42 74 25 Max 50 90 30 Units °C/W °C/W °C/W www.freescale.net.cn AON4421 P-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V VDS=-30V, VGS=0V -30 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) ID(ON) Gate Threshold Voltage On state drain current VDS=VGS ID=-250µA -0.8 VGS=-10V, VDS=-5V -60 VGS=-10V, ID=-8A TJ=125°C VGS=-4.5V, ID=-7A gFS Forward Transconductance VSD IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current IS VDS=-5V, ID=-8A Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(-10V) Total Gate Charge Qg(-4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time -5 ±10 µA -1.8 V 21 26 28 34 27 34 mΩ -1 V -3 A 1120 pF A 22 930 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-8A VGS=-10V, VDS=-15V, RL=1.9Ω, RGEN=3Ω µA -1.3 -0.74 DYNAMIC PARAMETERS Ciss Input Capacitance Units V TJ=55°C Static Drain-Source On-Resistance Max -1 IDSS RDS(ON) Typ mΩ S 170 pF 120 pF 8 Ω 17.6 21 nC 8.6 10 nC 2 nC 3.4 nC 6 ns 7 ns 40 ns 30 trr Body Diode Reverse Recovery Time IF=-8A, dI/dt=500A/µs 18 Qrr Body Diode Reverse Recovery Charge IF=-8A, dI/dt=500A/µs 32 ns 22 ns nC A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. 2/5 www.freescale.net.cn AON4421 P-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 60 -6V -10V -4.5V -4V 20 -ID(A) -ID (A) 40 -3.5V 30 20 VDS=-5V 25 50 15 10 -3V 5 10 25°C 125°C VGS=-2.5V 0 0 0 1 2 3 4 0.5 5 35 1.5 2 2.5 3 3.5 4 Normalized On-Resistance 1.5 VGS=-4.5V 30 RDS(ON) (mΩ) 1 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 25 20 VGS=-10V 15 VGS=-10V ID=-8A 1.4 1.3 17 1.2 VGS=-4.5V5 ID=-7A 2 1.1 10 1.0 0.9 10 0 4 8 12 16 0 20 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 70 ID=-8A 1.0E+01 60 -IS (A) RDS(ON) (mΩ) 40 1.0E+00 50 40 125°C 30 1.0E-02 25°C 1.0E-03 20 1.0E-04 25°C 1.0E-05 10 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/5 125°C 1.0E-01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON4421 P-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1400 VDS=-15V ID=-8A 1200 Capacitance (pF) -VGS (Volts) 8 6 4 Ciss 1000 800 600 400 Coss 2 200 0 Crss 0 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 20 0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 10000 100.0 TA=25°C 10µs 1000 1ms RDS(ON) limited Power (W) -ID (Amps) 10.0 10ms 1.0 100ms 0.1 0.1 1 -VDS (Volts) 10 1 0.00001 100 ZθJA Normalized Transient Thermal Resistance 1 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 100 10 10s DC TJ(Max)=150°C TA=25°C 0.0 0.01 10 30 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 PD 0.01 0.001 0.00001 Single Pulse 0.0001 0.001 0.01 Ton 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/5 www.freescale.net.cn AON4421 P-Channel Enhancement Mode Field Effect Transistor Gate Charge Test Circuit & W aveform Vgs Qg -10V + VDC - Qgs Vds Qgd + VDC DUT Vgs Ig Charge R esistive S w itching T est C ircuit & W avefo rm s RL V ds t off t on V gs VDC - DUT V gs Rg td(on) t d(o ff) tr tf 90% V dd + V gs 10% V ds D io de R ec overy T est C ircuit & W aveform s Q rr = - V ds + DUT Vds - Isd V gs Ig 5/5 Idt Vg s L -Isd + VD C - -I F t rr d I/d t -I R M V dd V dd -V d s www.freescale.net.cn