AO5804E Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO5804E/L uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. AO5804E and AO5804EL are electrically identical. -RoHS Compliant -AO5804EL is Halogen Free Features VDS (V) = 20V ID = 0.5 A (VGS = 4.5V) RDS(ON) < 0.55Ω (VGS = 4.5V) RDS(ON) < 0.68Ω (VGS = 2.5V) RDS(ON) < 0.80Ω (VGS = 1.8V) D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol 10 Sec VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain A, F Current TA=70°C PD TA=70°C TJ, TSTG Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady-State 1/5 C Steady-State 0.5 0.45 A 3 Junction and Storage Temperature Range Maximum Junction-to-Lead V 0.5 ID IDM TA=25°C Power Dissipation ±8 0.5 Pulsed Drain Current B A 20 Units V Steady State RθJA RθJL 0.38 0.28 0.24 0.18 -55 to 150 Typ 275 360 300 W °C Max 330 450 350 Units °C/W °C/W °C/W www.freescale.net.cn AO5804E Dual N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Typ Max 20 V VDS=20V, VGS=0V 1 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.45 ID(ON) On state drain current VGS=4.5V, VDS=5V 3 TJ=55°C 5 VDS=0V, VGS=±4.5V VDS=0V, VGS=±8V VGS=4.5V, ID=0.5A Units 0.6 µΑ ±1 µA ±100 µA 1 V A 0.4 0.55 0.6 0.85 VGS=2.5V, ID=0.5A 0.48 0.68 Ω VGS=1.8V, ID=0.3A 0.6 0.8 Ω Forward Transconductance VDS=5V, ID=0.5A 1.5 VSD Diode Forward Voltage IS=0.1A,VGS=0V 0.65 IS Maximum Body-Diode Continuous Current RDS(ON) gFS Static Drain-Source On-Resistance TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance 35 VGS=0V, VDS=10V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg S 1 V 0.4 A 45 pF 8 pF 6 pF 0.63 VGS=4.5V, VDS=10V, ID=0.5A Ω 1 nC Qgs Gate Source Charge 0.08 nC Qgd Gate Drain Charge 0.16 nC tD(on) Turn-On DelayTime 4.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=0.5A, dI/dt=100A/µs 8 Qrr Body Diode Reverse Recovery Charge IF=0.5A, dI/dt=100A/µs 2 Body Diode Reverse Recovery Time VGS=5V, VDS=10V, RL=50Ω, RGEN=3Ω 3.3 ns 78 ns 32 ns 10 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. 0.5 B: Repetitive rating, pulse width limited by junction temperature. 0.45 C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment 0.28with T A=25°C. The SOA curve provides a single pulse rating. 0.18 F. The maximum current rating is limited by bond-wires Rev3: Aug 2008 2/5 www.freescale.net.cn AO5804E Dual N-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2 3 4.5V VDS=5V 2.5V 1.5 3.5V 2 25°C ID(A) ID (A) 2V Vgs=1.5V 125°C 1 1 0.5 1V 0 0 0 1 2 3 4 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics 1.8 RDS(ON) (Ω ) 0.7 Normalized On-Resistance 0.8 VGS=1.8V 0.6 VGS=2.5V 0.5 0.4 VGS=4.5V 0.3 0.2 VGS=4.5V ID=0.5A 1.6 1.4 VGS=1.8V ID=-0.3A 1.2 VGS=2.5V ID=0.5A 1 0.8 0.6 0 0.2 0.4 0.6 0.8 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1 0.5 0.45 1.0E+00 ID=0.5A 1.0E-01 0.8 125°C 0.28 125°C 0.18 1.0E-02 0.6 IS (A) RDS(ON) (Ω ) 25 25°C 1.0E-03 0.4 1.0E-04 25°C 0.2 1.0E-05 0 1.0E-06 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AO5804E Dual N-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 5 VDS=10V ID=0.5A Capacitance (pF) VGS (Volts) 4 3 2 Ciss 40 20 Coss 1 0 Crss 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 10.0 14 RDS(ON) limited 10 100µs 1ms 0.1s DC 0.1 0.1 1 VDS (Volts) 6 4 1s 10s 2 10 0 0.0001 100 0.001 0.01 1 10 100 0.5 0.45 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=450°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.28 0.18 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.1 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 8 10ms TJ(Max)=150°C TA=25°C 0.0 0.01 Power (W) ID (Amps) 1.0 TJ(Max)=150°C TA=25°C 12 10µs Zθ JA Normalized Transient Thermal Resistance 5 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4/5 www.freescale.net.cn AO5804E Dual N-Channel Enhancement Mode Field Effect Transistor Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg Vgs 10% Vgs td(on) tr td(off) ton tf toff Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig 5/5 Isd L + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn