AO8807 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO8807 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. AO8807 and AO8807L are electrically identical. - RoHS Compliant -Halogen Free Features VDS (V) = -12V ID = -6.5 A (VGS = -4.5V) RDS(ON) < 20mΩ (VGS = -4.5V) RDS(ON) < 24mΩ (VGS = -2.5V) RDS(ON) < 30mΩ (VGS = -1.8V) D1 D2 TSSOP-8 Top View D1 S1 S1 G1 8 7 6 5 1 2 3 4 D2 S2 S2 G2 Rg Rg G1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current TA=70°C ID IDM C Junction and Storage Temperature Range 1/5 Units V ±8 V -60 1.4 W 0.9 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A -5 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient AD Maximum Junction-to-Lead Maximum -12 -6.5 TA=25°C Power Dissipation B S2 RθJA RθJL Typ 73 96 63 Max 90 125 75 Units °C/W °C/W °C/W www.freescale.net.cn AO8807 Dual P-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -12 -1 TJ=55°C -5 IGSS Gate-Body leakage current VDS=0V, VGS=±8V Gate Threshold Voltage VDS=VGS ID=-250µA -0.35 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -60 ±10 VGS=-4.5V, ID=-6.5A TJ=125°C Static Drain-Source On-Resistance VGS=-2.5V, ID=-6A Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On Delay Time tr Turn-On Rise Time A 16 20 23 28 19 24 mΩ mΩ 23 30 36 mΩ VDS=-5V, ID=-6.5A 45 -0.56 DYNAMIC PARAMETERS Ciss Input Capacitance Rg -0.85 28 Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Crss µA VGS=-1.8V, ID=-5.5A VSD Output Capacitance -0.53 µA VGS=-1.5V, ID=-5A Forward Transconductance Coss Units mΩ gFS IS Max V VDS=-12V, VGS=0V VGS(th) RDS(ON) Typ 1740 VGS=0V, VDS=-6V, f=1MHz S -1 V -1.4 A 2100 pF 334 pF VGS=0V, VDS=0V, f=1MHz 200 1.3 1.7 pF kΩ 19 23 nC VGS=-4.5V, VDS=-6V, ID=-6.5A 4.5 nC 5.3 nC 240 ns 580 7 ns µs 4.2 µs VGS=-4.5V, VDS=-6V, RL=0.9Ω, RGEN=3Ω tD(off) Turn-Off Delay Time tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-6.5A, dI/dt=100A/µs 22 Qrr Body Diode Reverse Recovery Charge IF=-6.5A, dI/dt=100A/µs 17 27 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on T J(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. 2/5 www.freescale.net.cn AO8807 Dual P-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 -4.5V 50 VDS=-5V -2.5V 50 -3V 40 -2V -ID(A) -ID (A) 40 30 30 20 20 VGS=-1.5V 10 125°C 10 0 25°C 0 0 1 2 3 4 5 0 45 1 1.5 2 2.5 3 1.6 Normalized On-Resistance 40 VGS=-1.5V 35 RDS(ON) (mΩ) 0.5 -VGS(Volts) Figure 2: Transfer Characteristics(Note E) -VDS (Volts) Figure 1: On-Region Characteristics(Note E) VGS=-2.5V 30 VGS=-1.8V 25 20 15 ID=-6A, VGS=-2.5V 1.4 ID=-6.5A, VGS=-4.5V 1.2 ID=-5A, VGS=-1.5V ID=-5.5A, VGS=-1.8V 1.0 VGS=-4.5V 10 0.8 0 2 4 6 8 10 12 14 16 18 20 0 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage(Note E) 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature(Note E) 50 1E+01 ID=-6.5A 45 1E+00 125°C 40 1E-01 35 30 -IS (A) RDS(ON) (mΩ) 50 125°C 25 25°C 1E-02 1E-03 20 1E-04 15 25°C 1E-05 10 0 2 4 6 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage(Note E) 3/5 8 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics(Note E) www.freescale.net.cn AO8807 Dual P-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2800 4.5 VDS=-6V ID=-6.5A 4 2400 Capacitance (pF) 3.5 -VGS (Volts) 3 2.5 2 1.5 1 1600 1200 800 0.5 400 0 0 0 4 8 12 16 Ciss 2000 20 Coss Crss 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 2 4 6 100 12 TJ(Max)=150°C TA=25°C 60 RDS(ON) limited 100µs 1ms 1 10s 0.1s Power (W) ID (Amps) 10 80 10µs 10 8 -VDS (Volts) Figure 8: Capacitance Characteristics 20 1s 0 DC TJ(Max)=150°C TA=25°C 0 0.01 40 0 0.0001 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=125°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note F) 4/5 www.freescale.net.cn AO8807 Dual P-Channel Enhancement Mode Field Effect Transistor Gate Charge Test Circuit & Waveform Vgs Qg - + VDC Qgs Vds Qgd + DUT - VDC -10V Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs VDC 90% - DUT Vdd + Rg Vgs 10% Vgs td(on) tr t d(off) ton tf t off Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig 5/5 Vgs L -Isd + Vdd VDC - -I F t rr dI/dt -I RM Vdd -Vds www.freescale.net.cn