AOT424 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT424 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOT424 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 30V ID = 110A (VGS = 10V) RDS(ON) < 4mΩ (VGS = 10V) RDS(ON) < 5.5mΩ (VGS = 4.5V) TO-220 D G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current B,G G TC=100°C C C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B Junction and Storage Temperature Range Maximum Junction-to-Case C ±20 V ID 88 IDM 200 IAR 30 A EAR 112 mJ W 50 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State A 100 PD TC=100°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V 110 B Pulsed Drain Current Avalanche Current Maximum 30 RθJA RθJC Typ 14.2 39 0.8 °C Max 20 50 1.5 Units °C/W °C/W °C/W www.freescale.net.cn AOT424 N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V TJ=55°C 5 VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 On state drain current VGS=10V, VDS=5V 110 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS Maximum Body-Diode Continuous Current VGS=10V, ID=30A Reverse Transfer Capacitance Rg Gate resistance 3 V A 4 6 VGS=4.5V, ID=30A 4.3 5.5 VDS=5V, ID=30A 106 IS=1A,VGS=0V 0.72 3700 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz Qg(4.5V) Total Gate Charge VGS=10V, VDS=15V, ID=30A Gate Source Charge mΩ mΩ S 1 V 85 A 4400 pF 700 pF 390 SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs nA 3 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance 2 µA 100 4.7 TJ=125°C Units V 1 ID(ON) Crss Max 30 VDS=24V, VGS=0V IDSS Coss Typ pF 0.54 0.7 Ω 59.6 72 nC 30.4 37 nC 9.5 nC Qgd Gate Drain Charge 19.8 nC tD(on) Turn-On DelayTime 12.5 ns tr Turn-On Rise Time 35.5 ns tD(off) Turn-Off DelayTime 40 ns tf trr Turn-Off Fall Time IF=30A, dI/dt=100A/µs 35.3 Qrr Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs 30.7 VGS=10V, VDS=15V, RL=0.5Ω, RGEN=3Ω 32.5 Body Diode Reverse Recovery Time ns 42 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB or heatsink allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. 2 F. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by the package current capability. Rev4: July 2008 www.freescale.net.cn AOT424 N-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 10V VDS=5V 50 50 4.0V 40 ID(A) ID (A) 40 30 3.5V 125°C 30 25°C 20 20 10 10 VGS=3V 0 0 0 1 2 3 4 1.5 5 2 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 5 1.8 Normalized On-Resistance VGS=4.5V RDS(ON) (mΩ ) 2.5 4 3 VGS=10V 2 VGS=10V ID=30A 1.6 1.4 VGS=4.5V ID=30A 1.2 1 0.8 0 10 20 30 40 50 60 0 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 10 1.0E+02 ID=30A 1.0E+01 125°C 8 125°C 6 IS (A) RDS(ON) (mΩ ) 1.0E+00 4 25°C 1.0E-01 25°C 1.0E-02 1.0E-03 2 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AOT424 N-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5000 10 VDS=15V ID=30A 4000 Capacitance (pF) VGS (Volts) 8 Ciss 6 4 3000 2000 Coss 2 1000 0 0 Crss 0 10 20 30 40 50 60 0 Qg (nC) Figure 7: Gate-Charge Characteristics 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 TJ(Max)=175°C TC=25°C 900 10.0 1m DC 1.0 10ms 0.1s RDS(ON) limited 0.1 700 600 500 400 300 200 100 TJ(Max)=175°C TC=25°C 0.0 0.01 800 Power (W) 10µs 10µs 100µ 100.0 ID (Amps) 10 1000 1000.0 0.1 5 0 0.0001 0.001 1 VDS (Volts) 10 100 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJC.RθJC RθJC=1.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, single pulse 1 PD 0.1 0.01 0.00001 Ton Single Pulse 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) www.freescale.net.cn