AO4771 30V P-Channel MOSFET General Description AO4771 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch,or for "standard buck" DC-DC conver sion applications. Features VDS -30V -4A ID (at VGS=-10V) RDS(ON) (at VGS=-10V) < 68mΩ RDS(ON) (at VGS=-4.5V) < 105mΩ SOIC-8 A A S G 1 2 3 4 8 7 6 5 K K D D G K Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol MOSFET Parameter Drain-Source Voltage VDS -30 Gate-Source Voltage Continuous Drain Current VGS TA=25°C ±20 Units V V -3 A Pulsed Drain Current C IDM -18 Avalanche Current C IAS, IAR 11 A Avalanche energy L=0.1mH C EAS, EAR 6 mJ Schottky reverse voltage Continuous Forward TA=25°C VKA Current Junction and Storage Temperature Range Parameter: Schottky Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead 4 2.5 2 2 1.3 1.3 TJ, TSTG -55 to 150 -55 to 150 °C Symbol Typ 48 74 32 Max 62.5 90 40 Units °C/W °C/W °C/W 49 72 31 62.5 90 40 °C/W °C/W °C/W PD TA=70°C Thermal Characteristics Parameter: MOSFET Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead 30 IF TA=70°C TA=25°C Power Dissipation B 1/6 Schottky S -4 ID TA=70°C D A Top View t ≤ 10s Steady-State Steady-State t ≤ 10s Steady-State Steady-State RθJA RθJL RθJA RθJL W www.freescale.net.cn AO4771 30V P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Conditions Min ID=-250µA, VGS=0V -30 Typ Max V VDS=-30V, VGS=0V -1 TJ=55°C -5 VDS=0V, VGS= ±20V ±100 VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.3 ID(ON) On state drain current VGS=-10V, VDS=-5V -18 VGS=-10V, ID=-4A -1.8 -2.3 68 79 95 VGS=-4.5V, ID=-3A 83 105 VDS=-5V, ID=-4A 8 Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance µA nA V A 56 RDS(ON) Units -0.8 mΩ mΩ S -1 V -2 A 230 290 350 pF 40 60 80 pF 25 40 55 pF 7.5 16 24 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 4.6 5.8 7 nC Qg(4.5V) Total Gate Charge 2.2 2.8 3 nC 0.9 1.1 1.3 nC 0.8 1.3 1.8 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-4A Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-4A, dI/dt=100A/µs 8 10 12 Qrr Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs 16 20 24 ns nC 0.5 V SCHOTTKY PARAMETERS VF Forward Voltage Drop Irm Maximum reverse leakage current CT Junction Capacitance VGS=-10V, VDS=-15V, RL=3.75Ω, RGEN=3Ω IF=1A 6 ns 5 ns 21 ns 9 ns 0.4 VR=24V 0.05 VR=24V, TJ=125°C VR=15V mA 10 56 pF A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. 2/6 www.freescale.net.cn AO4771 30V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 10 -10V -8V VDS=-5V -4.5V 15 6 -4.0V -ID(A) -ID (A) 8 10 4 125°C -3.5V 5 2 25°C VGS=-3V 0 0 0 1 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics(Note E) 5 0 120 2 3 4 -VGS(Volts) Figure 2: Transfer Characteristics(Note E) 5 Normalized On-Resistance 1.6 100 RDS(ON) (mΩ ) 1 VGS=-4.5V 80 60 VGS=-10V ID=-4A 1.4 1.2 VGS=-4.5V ID=-3A 1 VGS=-10V 0.8 40 0 1 2 3 4 5 6 7 0 8 25 75 100 125 150 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature(Note E) -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage(Note E) 220 50 175 1E+01 1E+00 140 1E-01 -IS (A) RDS(ON) (mΩ ) ID=-4A 180 125°C 125°C 25°C 1E-02 100 1E-03 60 25°C 1E-04 20 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage(Note E) 3/6 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics(Note E) www.freescale.net.cn AO4771 30V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 400 VDS=-15V ID=-4A Ciss Capacitance (pF) -VGS (Volts) 8 6 4 300 200 Coss 100 2 Crss 0 0 0 1 2 3 4 5 0 6 -Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 10000 100.0 TJ(Max)=150°C TA=25°C 10µs RDS(ON) limited 100µs 1.0 1ms 1000 Power (W) -ID (Amps) 10.0 100 10ms 0.1 10 TJ(Max)=150°C TA=25°C DC 10s 0.0 1 0.01 0.1 1 -VDS (Volts) 10 100 0.000001 0.0001 0.01 1 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AO4771 30V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 280 Capacitance (pF) IF (Amps) 240 1 125°C 25°C 200 160 120 80 40 0 0.1 0 0.2 0.4 0.6 0.8 1 0 1.2 10 15 20 25 30 10 0.50 Leakage Current (mA) IF=1A 0.45 0.40 VF (Volts) 5 VKA (Volts) Figure 13: Schottky Capacitance Characteristics VF (V) Figure 12: Schottky Forward Characteristics 0.35 0.30 IF=0.5A VKA=30V 1 0.1 VKA=24V 0.01 0.25 0.20 0.001 0 25 50 75 100 125 Temperature (°C) Figure 14: Schottky Forward Drop vs. Junction Temperature 5/6 150 0 25 50 75 100 125 150 Temperature (°C) Figure 15: Schottky Leakage Current vs. Junction Temperature www.freescale.net.cn AO4771 30V P-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig 6/6 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds RθJL www.freescale.net.cn