SHENZHENFREESCALE AON7611

AON7611
30V Complementary MOSFET
General Description
The AON7611 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The
complementary MOSFETs may be used in inverter and other applications.
Features
N-channel
P-channel
VDS (V) = 30V
VDS (V) = -30V
ID = 9.0A
ID = -18.5A
(VGS = ±10V)
RDS(ON) < 50mΩ
RDS(ON) < 38mΩ
(VGS = ±10V)
RDS(ON) < 70mΩ
RDS(ON) < 62mΩ
(VGS = ±4.5V)
100% UIS Tested
100% Rg Tested
D1
D2
Top View
S2
G2
D2
S1
D1
G1
D1
D2
G1
G2
S2
N-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max N-channel
Drain-Source Voltage
VDS
30
Gate-Source Voltage
Continuous Drain
Current
VGS
TA=25°C
ID
TA=100°C
Pulsed Drain Current C
Continuous Drain
Current A
IDM
TA=25°C
IDSM
TA=70°C
Avalanche Current C
IAR
Repetitive avalanche energy L=0.1mH
TA=25°C
Power Dissipation B
C
TA=100°C
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Thermal Characteristics: N-channel
Parameter
t ≤ 10s
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D Steady-State
B
Steady-State
Maximum Junction-to-Case
Thermal Characteristics: P-channel
Parameter
t ≤ 10s
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D Steady-State
Maximum Junction-to-Case
1 / 11
PD
Steady-State
P-channel
Max P-channel
-30
Units
V
±20
±20
V
9
-18.5
5.5
-11.5
20
-35
4
-5
A
3
-4
7
-17
A
2
14
mJ
7
20.8
2.8
8.3
W
1.5
1.5
0.9
0.9
TJ, TSTG
-55 to 150
-55 to 150
°C
Symbol
Typ
40
70
15
Max
50
85
18
Units
°C/W
°C/W
°C/W
Typ
40
70
5
Max
50
85
6
Units
°C/W
°C/W
°C/W
PDSM
TA=70°C
B
EAR
S1
RθJA
RθJC
Symbol
RθJA
RθJC
W
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AON7611
30V Complementary MOSFET
N-channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
1.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
20
TJ=55°C
5
±100
nA
2.5
V
40
50
64
80
VGS=4.5V, ID=3A
53
70
mΩ
1
V
9.5
A
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=4A
11
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.79
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
2
VGS=10V, ID=4A
Output Capacitance
Units
V
1
Zero Gate Voltage Drain Current
Coss
Max
30
VDS=30V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=0V, VDS=15V, f=1MHz
S
170
pF
35
pF
23
VGS=0V, VDS=0V, f=1MHz
pF
Ω
3.5
5.3
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
4.05
10
nC
Qg(4.5V) Total Gate Charge
2
6
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=10V, VDS=15V, ID=4A
1.7
mΩ
0.55
nC
1
nC
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=4A, dI/dt=100A/µs
Qrr
Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/µs
2.5
VGS=10V, VDS=15V, RL=3.75Ω,
RGEN=3Ω
4.5
ns
1.5
ns
18.5
ns
15.5
ns
7.5
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
2 / 11
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AON7611
30V Complementary MOSFET
N-channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10
10V
VDS=5V
4V
8
4.5V
10
ID (A)
6
ID(A)
3.5V
4
125°C
5
25°C
2
VGS=3V
0
0
0
1
2
3
4
1
5
80
3
4
5
Normalized On-Resistance
2
VGS=4.5V
60
RDS(ON) (mΩ
Ω)
2
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
40
VGS=10V
20
1.8
VGS=10V
ID=4A
1.6
17
5
2
VGS=4.5V
10
1.4
1.2
ID=3A
1
0.8
0
0
2
0
4
6
8
10
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
120
1.0E+01
ID=4A
1.0E+00
100
40
125°C
60
1.0E-02
125°C
1.0E-03
40
25°C
20
25°C
1.0E-04
1.0E-05
0
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
3 / 11
1.0E-01
IS (A)
RDS(ON) (mΩ
Ω)
80
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON7611
30V Complementary MOSFET
N-channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
300
10
VDS=15V
ID=4A
250
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
200
150
100
2
Coss
50
0
Crss
0
0
1
2
3
4
Qg (nC)
Figure 7: Gate-Charge Characteristics
5
0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
200
100
TC=25°C
RDS(ON)
limited
100µs
1
1ms
10ms
120
80
DC
TJ(Max)=150°C
TC=25°C
0.1
Power (W)
ID (Amps)
160
10µs
10
40
0.01
0
0.01
0.1
1
VDS (Volts)
10
100
0.00001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
Zθ JC Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJC.RθJC
1
RθJC=18°C/W
0.1
PD
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4 / 11
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AON7611
30V Complementary MOSFET
N-channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
8
8
Current rating ID(A)
10
Power Dissipation (W)
10
6
4
2
6
4
2
0
0
0
25
50
75
100
125
TCASE (°C)
Figure 12: Power De-rating (Note F)
150
0
25
50
75
100
125
TCASE (°C)
Figure 13: Current De-rating (Note F)
150
10000
TA=25°C
Power (W)
1000
17
5
2
10
100
10
1
0.00001
0 1000
18
0.001
0.1
10
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=85°C/W
0.1
PD
Single Pulse
0.01
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
5 / 11
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AON7611
30V Complementary MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
6 / 11
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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AON7611
30V Complementary MOSFET
P-channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-30
-1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250µA
-1.4
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-35
TJ=55°C
-5
nA
-2.4
V
30
38
45
57
VGS=-4.5V, ID=-4A
46
62
10
TJ=125°C
gFS
Forward Transconductance
VDS=-5V, ID=-5A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
Reverse Transfer Capacitance
Rg
Gate resistance
A
-0.76
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
µA
±100
Static Drain-Source On-Resistance
Output Capacitance
Units
-1.9
VGS=-10V, ID=-5A
Coss
Max
V
VDS=-30V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=0V, VDS=-15V, f=1MHz
mΩ
mΩ
S
-1
V
-20
A
520
pF
100
pF
65
pF
7.5
11.5
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
9.2
20
nC
Qg(4.5V) Total Gate Charge
4.6
10
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, ID=-5A
3.5
1.6
nC
2.2
nC
7.5
ns
VGS=-10V, VDS=-15V, RL=3.0Ω,
RGEN=3Ω
5.5
ns
19
ns
tf
Turn-Off Fall Time
7
ns
trr
Body Diode Reverse Recovery Time
IF=-5A, dI/dt=100A/µs
11
Qrr
Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs
5.3
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
7 / 11
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AON7611
30V Complementary MOSFET
P-channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
-10V
-8V
30
-5V
VDS=-5V
25
25
-4.5V
20
-ID(A)
-ID (A)
20
15
-4V
10
15
125°C
10
5
5
VGS=-3.5V
25°C
0
0
0
1
2
3
4
1
5
100
3
4
5
6
Normalized On-Resistance
1.8
80
VGS=-4.5V
RDS(ON) (mΩ
Ω)
2
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
60
40
VGS=-10V
20
1.6
VGS=-10V
ID=-5A
1.4
17
5
2
10
VGS=-4.5V
1.2
1
ID=-4A
0.8
0
0
2
0
4
6
8
10
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
120
1.0E+02
ID=-5A
1.0E+01
100
40
1.0E+00
125°C
125°C
60
1.0E-01
1.0E-02
25°C
40
1.0E-03
20
25°C
1.0E-04
1.0E-05
0
2
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
8 / 11
-IS (A)
RDS(ON) (mΩ
Ω)
80
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON7611
30V Complementary MOSFET
P-channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
800
VDS=-15V
ID=-5A
700
8
Capacitance (pF)
-VGS (Volts)
600
6
4
Ciss
500
400
300
Coss
200
2
100
0
Crss
0
0
2
4
6
8
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
0
5
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
200
100.0
TC=25°C
10µs
150
RDS(ON)
limited
100µs
Power (W)
-ID (Amps)
10.0
30
1ms
10ms
1.0
100
DC
TJ(Max)=150°C
TC=25°C
0.1
50
0.0
0
0.01
0.1
1
-VDS (Volts)
10
100
0.00001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=6.0°C/W
1
0.1
PD
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
9 / 11
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AON7611
30V Complementary MOSFET
25
20
20
16
Current rating ID(A)
Power Dissipation (W)
P-channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10
5
12
8
4
0
0
0
25
50
75
100
125
TCASE (°C)
Figure 12: Power De-rating (Note F)
150
0
25
50
75
100
125
TCASE (°C)
Figure 13: Current De-rating (Note F)
150
10000
TA=25°C
Power (W)
1000
17
5
2
10
100
10
1
0.00001
0 1000
18
0.001
0.1
10
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=85°C/W
0.1
Single Pulse
PD
0.01
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
10 / 11
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AON7611
30V Complementary MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
Qgd
+
+
DUT
Qgs
Vds
VDC
Vgs
Ig
Charge
R e s is tiv e S w itc h in g T e s t C irc u it & W a v e fo rm s
RL
Vds
t o ff
to n
td (o n )
Vgs
-
DUT
Vgs
t d (o ff)
tr
tf
90%
Vdd
VDC
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
EAR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
D iode R e covery Te st C ircuit & W aveform s
Q rr = -
V ds +
Idt
DUT
V gs
Vds -
Isd
V gs
Ig
11 / 11
L
-Isd
+ V dd
t rr
dI/dt
-I R M
V dd
VDC
-
-I F
-Vds
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