AON7611 30V Complementary MOSFET General Description The AON7611 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. Features N-channel P-channel VDS (V) = 30V VDS (V) = -30V ID = 9.0A ID = -18.5A (VGS = ±10V) RDS(ON) < 50mΩ RDS(ON) < 38mΩ (VGS = ±10V) RDS(ON) < 70mΩ RDS(ON) < 62mΩ (VGS = ±4.5V) 100% UIS Tested 100% Rg Tested D1 D2 Top View S2 G2 D2 S1 D1 G1 D1 D2 G1 G2 S2 N-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max N-channel Drain-Source Voltage VDS 30 Gate-Source Voltage Continuous Drain Current VGS TA=25°C ID TA=100°C Pulsed Drain Current C Continuous Drain Current A IDM TA=25°C IDSM TA=70°C Avalanche Current C IAR Repetitive avalanche energy L=0.1mH TA=25°C Power Dissipation B C TA=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics: N-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Steady-State B Steady-State Maximum Junction-to-Case Thermal Characteristics: P-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Steady-State Maximum Junction-to-Case 1 / 11 PD Steady-State P-channel Max P-channel -30 Units V ±20 ±20 V 9 -18.5 5.5 -11.5 20 -35 4 -5 A 3 -4 7 -17 A 2 14 mJ 7 20.8 2.8 8.3 W 1.5 1.5 0.9 0.9 TJ, TSTG -55 to 150 -55 to 150 °C Symbol Typ 40 70 15 Max 50 85 18 Units °C/W °C/W °C/W Typ 40 70 5 Max 50 85 6 Units °C/W °C/W °C/W PDSM TA=70°C B EAR S1 RθJA RθJC Symbol RθJA RθJC W www.freescale.net.cn AON7611 30V Complementary MOSFET N-channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 20 TJ=55°C 5 ±100 nA 2.5 V 40 50 64 80 VGS=4.5V, ID=3A 53 70 mΩ 1 V 9.5 A Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=4A 11 VSD Diode Forward Voltage IS=1A,VGS=0V 0.79 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 2 VGS=10V, ID=4A Output Capacitance Units V 1 Zero Gate Voltage Drain Current Coss Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=15V, f=1MHz S 170 pF 35 pF 23 VGS=0V, VDS=0V, f=1MHz pF Ω 3.5 5.3 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 4.05 10 nC Qg(4.5V) Total Gate Charge 2 6 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=15V, ID=4A 1.7 mΩ 0.55 nC 1 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=4A, dI/dt=100A/µs Qrr Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/µs 2.5 VGS=10V, VDS=15V, RL=3.75Ω, RGEN=3Ω 4.5 ns 1.5 ns 18.5 ns 15.5 ns 7.5 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. 2 / 11 www.freescale.net.cn AON7611 30V Complementary MOSFET N-channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10 10V VDS=5V 4V 8 4.5V 10 ID (A) 6 ID(A) 3.5V 4 125°C 5 25°C 2 VGS=3V 0 0 0 1 2 3 4 1 5 80 3 4 5 Normalized On-Resistance 2 VGS=4.5V 60 RDS(ON) (mΩ Ω) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 40 VGS=10V 20 1.8 VGS=10V ID=4A 1.6 17 5 2 VGS=4.5V 10 1.4 1.2 ID=3A 1 0.8 0 0 2 0 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 120 1.0E+01 ID=4A 1.0E+00 100 40 125°C 60 1.0E-02 125°C 1.0E-03 40 25°C 20 25°C 1.0E-04 1.0E-05 0 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3 / 11 1.0E-01 IS (A) RDS(ON) (mΩ Ω) 80 4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON7611 30V Complementary MOSFET N-channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 300 10 VDS=15V ID=4A 250 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 200 150 100 2 Coss 50 0 Crss 0 0 1 2 3 4 Qg (nC) Figure 7: Gate-Charge Characteristics 5 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 200 100 TC=25°C RDS(ON) limited 100µs 1 1ms 10ms 120 80 DC TJ(Max)=150°C TC=25°C 0.1 Power (W) ID (Amps) 160 10µs 10 40 0.01 0 0.01 0.1 1 VDS (Volts) 10 100 0.00001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 Zθ JC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJC.RθJC 1 RθJC=18°C/W 0.1 PD Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4 / 11 www.freescale.net.cn AON7611 30V Complementary MOSFET N-channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 8 Current rating ID(A) 10 Power Dissipation (W) 10 6 4 2 6 4 2 0 0 0 25 50 75 100 125 TCASE (°C) Figure 12: Power De-rating (Note F) 150 0 25 50 75 100 125 TCASE (°C) Figure 13: Current De-rating (Note F) 150 10000 TA=25°C Power (W) 1000 17 5 2 10 100 10 1 0.00001 0 1000 18 0.001 0.1 10 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=85°C/W 0.1 PD Single Pulse 0.01 Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) 5 / 11 www.freescale.net.cn AON7611 30V Complementary MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 6 / 11 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn AON7611 30V Complementary MOSFET P-channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250µA -1.4 ID(ON) On state drain current VGS=-10V, VDS=-5V -35 TJ=55°C -5 nA -2.4 V 30 38 45 57 VGS=-4.5V, ID=-4A 46 62 10 TJ=125°C gFS Forward Transconductance VDS=-5V, ID=-5A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current Reverse Transfer Capacitance Rg Gate resistance A -0.76 DYNAMIC PARAMETERS Ciss Input Capacitance Crss µA ±100 Static Drain-Source On-Resistance Output Capacitance Units -1.9 VGS=-10V, ID=-5A Coss Max V VDS=-30V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=-15V, f=1MHz mΩ mΩ S -1 V -20 A 520 pF 100 pF 65 pF 7.5 11.5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 9.2 20 nC Qg(4.5V) Total Gate Charge 4.6 10 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-5A 3.5 1.6 nC 2.2 nC 7.5 ns VGS=-10V, VDS=-15V, RL=3.0Ω, RGEN=3Ω 5.5 ns 19 ns tf Turn-Off Fall Time 7 ns trr Body Diode Reverse Recovery Time IF=-5A, dI/dt=100A/µs 11 Qrr Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs 5.3 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. 7 / 11 www.freescale.net.cn AON7611 30V Complementary MOSFET P-channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -10V -8V 30 -5V VDS=-5V 25 25 -4.5V 20 -ID(A) -ID (A) 20 15 -4V 10 15 125°C 10 5 5 VGS=-3.5V 25°C 0 0 0 1 2 3 4 1 5 100 3 4 5 6 Normalized On-Resistance 1.8 80 VGS=-4.5V RDS(ON) (mΩ Ω) 2 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 60 40 VGS=-10V 20 1.6 VGS=-10V ID=-5A 1.4 17 5 2 10 VGS=-4.5V 1.2 1 ID=-4A 0.8 0 0 2 0 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 120 1.0E+02 ID=-5A 1.0E+01 100 40 1.0E+00 125°C 125°C 60 1.0E-01 1.0E-02 25°C 40 1.0E-03 20 25°C 1.0E-04 1.0E-05 0 2 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 8 / 11 -IS (A) RDS(ON) (mΩ Ω) 80 4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON7611 30V Complementary MOSFET P-channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 800 VDS=-15V ID=-5A 700 8 Capacitance (pF) -VGS (Volts) 600 6 4 Ciss 500 400 300 Coss 200 2 100 0 Crss 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 10 0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 200 100.0 TC=25°C 10µs 150 RDS(ON) limited 100µs Power (W) -ID (Amps) 10.0 30 1ms 10ms 1.0 100 DC TJ(Max)=150°C TC=25°C 0.1 50 0.0 0 0.01 0.1 1 -VDS (Volts) 10 100 0.00001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=6.0°C/W 1 0.1 PD Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 9 / 11 www.freescale.net.cn AON7611 30V Complementary MOSFET 25 20 20 16 Current rating ID(A) Power Dissipation (W) P-channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10 5 12 8 4 0 0 0 25 50 75 100 125 TCASE (°C) Figure 12: Power De-rating (Note F) 150 0 25 50 75 100 125 TCASE (°C) Figure 13: Current De-rating (Note F) 150 10000 TA=25°C Power (W) 1000 17 5 2 10 100 10 1 0.00001 0 1000 18 0.001 0.1 10 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=85°C/W 0.1 Single Pulse PD 0.01 Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) 10 / 11 www.freescale.net.cn AON7611 30V Complementary MOSFET Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC Qgd + + DUT Qgs Vds VDC Vgs Ig Charge R e s is tiv e S w itc h in g T e s t C irc u it & W a v e fo rm s RL Vds t o ff to n td (o n ) Vgs - DUT Vgs t d (o ff) tr tf 90% Vdd VDC + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L EAR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs D iode R e covery Te st C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs Vds - Isd V gs Ig 11 / 11 L -Isd + V dd t rr dI/dt -I R M V dd VDC - -I F -Vds www.freescale.net.cn