AOT14N50/AOB14N50/AOTF14N50 500V, 14A N-Channel MOSFET General Description The AOT14N50 &AOB14N50 & AOTF14N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on) , C iss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Features VDS ID (at VGS=10V) 600V@150℃ 14A RDS(ON) (at VGS=10V) < 0.38Ω D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol AOT14N50/AOB14N50 Parameter Drain-Source Voltage VDS 500 Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current TC=100°C C ID ±30 14 Units V V 14* 11 IDM 11* A 56 Avalanche Current C IAR 6 A Repetitive avalanche energy C EAR 540 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C B Power Dissipation Derate above 25oC EAS dv/dt 1080 5 mJ V/ns W Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D TJ, TSTG A PD 278 50 2.2 0.4 TL Symbol RθJA RθCS Maximum Case-to-sink Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. 1/6 AOTF14N50 -55 to 150 W/ oC °C 300 °C AOT14N50/AOB14N50 65 AOTF14N50 65 Units °C/W 0.5 0.45 -2.5 °C/W °C/W www.freescale.net.cn AOT14N50/AOB14N50/AOTF14N50 500V, 14A N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 500 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA ID=250µA, VGS=0V, TJ=150°C 600 V ID=250µA, VGS=0V 0.5 V/ oC VDS=500V, VGS=0V 1 VDS=400V, TJ=125°C 10 ±100 3.3 4.2 4.5 nΑ V 0.38 Ω RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=7A 0.29 gFS Forward Transconductance VDS=40V, ID=7A 20 VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM V Maximum Body-Diode Continuous Current 14 A Maximum Body-Diode Pulsed Current 56 A Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 1531 1914 2297 pF VGS=0V, VDS=25V, f=1MHz 153 191 229 pF 11 16 20 pF VGS=0V, VDS=0V, f=1MHz 1.75 3.5 5.3 Ω SWITCHING PARAMETERS Total Gate Charge Qg Qgs Gate Source Charge 0.71 S 1 DYNAMIC PARAMETERS Ciss Input Capacitance Coss µA VGS=10V, VDS=400V, ID=14A 42.8 51 nC 9.3 11 nC nC Qgd Gate Drain Charge 20.3 24 tD(on) Turn-On DelayTime 44 53 ns tr Turn-On Rise Time 84 101 ns 92 110 ns 50 60 ns 289 347 4.93 6 ns µC tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=250V, ID=14A, RG=25Ω IF=14A,dI/dt=100A/µs,VDS=100V Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=14A,dI/dt=100A/µs,VDS=100V A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. L=60mH, IAS=6A, VDD=150V, RG=25Ω, Starting TJ=25°C 2/6 www.freescale.net.cn AOT14N50/AOB14N50/AOTF14N50 500V, 14A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 100 10V -55°C VDS=40V 6.5V 25 10 6V ID(A) ID (A) 20 15 10 125°C VGS=5.5V 1 25°C 5 0 0.1 0 5 10 15 20 25 30 2 4 6 8 10 VGS(Volts) Figure 2: Transfer Characteristics 0.5 3 0.5 2.5 Normalized On-Resistance RDS(ON) (Ω ) VDS (Volts) Fig 1: On-Region Characteristics 0.4 VGS=10V 0.4 0.3 0.3 VGS=10V ID=7A 2 1.5 1 0.5 0.2 0 5 10 15 20 25 0 30 -100 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 1.2 1.0E+00 40 125°C IS (A) BVDSS (Normalized) 1.0E+01 1.1 1 1.0E-01 25°C 1.0E-02 1.0E-03 0.9 1.0E-04 1.0E-05 0.8 -100 -50 0 50 100 150 200 TJ (°C) Figure 5:Break Down vs. Junction Temparature 3/6 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AOT14N50/AOB14N50/AOTF14N50 500V, 14A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 VDS=400V ID=14A 12 Ciss Capacitance (pF) VGS (Volts) 1000 9 6 Coss 100 Crss 10 3 1 0 0 10 20 30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics 1 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 100 100 10µs 10µs RDS(ON) limited 1ms 10ms 1 DC 0.1s RDS(ON) limited 10 100µs 100µs ID (Amps) 10 ID (Amps) 0.1 60 1ms 1 10ms 0.1s 1s 10s DC TJ(Max)=150°C TC=25°C 0.1 TJ(Max)=150°C TC=25°C 0.1 0.01 0.01 1 10 100 1000 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOT14N50/AOB14N50 (Note F) 1 10 100 1000 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area for AOTF14N50 (Note F) 18 Current rating ID(A) 15 12 9 6 3 0 0 25 50 75 100 125 150 TCASE (°C) Figure 11: Current De-rating (Note B) 4/6 www.freescale.net.cn AOT14N50/AOB14N50/AOTF14N50 500V, 14A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.45°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton 0.01 T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance for AOT14N50/AOB14N50 (Note F) Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF14N50 (Note F) 5/6 www.freescale.net.cn AOT14N50/AOB14N50/AOTF14N50 500V, 14A N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig 6/6 L Isd + Vdd trr dI/dt IRM Vdd VDC - IF Vds www.freescale.net.cn