BYW52, BYW53, BYW54, BYW55, BYW56 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristics • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading 949539 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA APPLICATIONS Case: SOD-57 • Rectification, general purpose Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE BYW52 VR = 200 V; IFAV = 2 A SOD-57 BYW53 VR = 400 V; IFAV = 2 A SOD-57 BYW54 VR = 600 V; IFAV = 2 A SOD-57 BYW55 VR = 800 V; IFAV = 2 A SOD-57 BYW56 VR = 1000 V; IFAV = 2 A SOD-57 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage = repetitive peak reverse voltage Peak forward surge current See electrical characteristics PART SYMBOL VALUE UNIT BYW52 VR = VRRM 200 V BYW53 VR = VRRM 400 V BYW54 VR = VRRM 600 V BYW55 VR = VRRM 800 V BYW56 VR = VRRM 1000 V IFSM 50 A tp = 10 ms, half sine wave Repetitive peak forward current Average forward current Pulse avalanche peak power Pulse energy in avalanche mode, non repetitive (inductive load switch off) IFRM 12 A ϕ = 180 ° IFAV 2 A tp = 20 μs half sine wave, Tj = 175 °C PR 1000 W l(BR)R = 1 A, Tj = 175 °C ER 20 mJ i2t 8 A2s Tj = Tstg - 55 to + 175 °C i2t-rating Junction and storage temperature range MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified) PARAMETER Junction ambient www.vishay.com 158 TEST CONDITION SYMBOL VALUE Lead length l = 10 mm, TL = constant RthJA 45 K/W On PC board with spacing 25 mm RthJA 100 K/W For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] UNIT Document Number: 86049 Rev. 1.7, 25-Aug-10 BYW52, BYW53, BYW54, BYW55, BYW56 Standard Avalanche Sinterglass Diode Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX IF = 1 A VF - 0.9 1 V VR = VRRM IR - 0.1 1 μA μA Forward voltage Reverse current UNIT VR = VRRM, Tj = 100 °C IR - 5 10 Breakdown voltage IR = 100 μA, tp/T = 0.01, tp = 0.3 ms V(BR) - - 1600 V Diode capacitance VR = 4 V, f = 1 MHz CD - 18 - pF μs Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A trr - - 4 IF = 1 A, dI/dt = 5 A/μs, VR = 50 V trr - - 4 μs lF = 1 A, dI/dt = 5 A/μs Qrr - - 200 nC Reverse recovery charge 120 l 2.5 l IFAV - Average Forward Current (A) RthJA - Ther. Resist. Junction/Ambient (K/W) TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 100 80 TL = constant 60 40 20 2.0 0 949101 1.0 RthJA = 100 K/W 0.5 PCB: d = 25 mm 5 10 15 20 25 30 l - Lead Length (mm) 0 20 40 60 80 100 120 140 160 180 Tamb - Ambient Temperature (°C) 16351 Fig. 1 - Typ. Thermal Resistance vs. Lead Length Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 10 1000 IR - Reverse Current (μA) Tj = 175 °C IF - Forward Current (A) RthJA = 45 K/W l = 10 mm 1.5 0.0 0 1 Tj = 25 °C 0.1 0.01 VR = VRRM 100 10 0.001 1 0.0 16350 VR = VRRM half sine wave 0.4 0.8 1.2 1.6 VF - Forward Voltage (V) Fig. 2 - Forward Current vs. Forward Voltage Document Number: 86049 Rev. 1.7, 25-Aug-10 25 16352 50 75 100 125 150 175 Tj - Junction Temperature (°C) Fig. 4 - Reverse Current vs. Junction Temperature For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 159 BYW52, BYW53, BYW54, BYW55, BYW56 Standard Avalanche Sinterglass Diode 400 40 VR = VRRM 350 CD - Diode Capacitance (pF) PR - Reverse Power Dissipation (mW) Vishay Semiconductors 300 PR - Limit at 100 % VR 250 200 150 PR - Limit at 80 % VR 100 50 30 25 20 15 10 5 0 25 16353 50 75 100 125 150 f = 1 MHz 35 0 175 0.1 Tj - Junction Temperature (°C) 16354 Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature 1 10 100 VR - Reverse Voltage (V) Fig. 6 - Diode Capacitance vs. Reverse Voltage 1000 Zthp - Thermal Resistance for Pulse Cond. (K/W) VRRM = 1000 V, RthJA = 100 K/W 100 tp/T = 0.5 Tamb = 25 °C tp/T = 0.2 10 Tamb = 45 °C tp/T = 0.1 Tamb = 60 °C tp/T = 0.05 1 tp/T = 0.02 Tamb = 70 °C tp/T = 0.01 Tamb = 100 °C 10-5 10-4 10-3 10-2 10-1 100 101 tp - Pulse Length (s) 94 9178 1 10 100 IFRM - Repetitive Peak Forward Current (A) Fig. 7 - Thermal Response 3.6 (0.142) max. 0.82 (0.032) max. PACKAGE DIMENSIONS in millimeters (inches): SOD-57 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. 20543 www.vishay.com 160 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 86049 Rev. 1.7, 25-Aug-10 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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