EFM101 THRU EFM107 50V-600V SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER 1.0A FEATURES * * * * * * Glass passivated device Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weight: 0.057 gram Mechanical Data * Epoxy : Device has UL flammability classification 94V-0 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS (@ TA=25 OC unless otherwise noted) SYMBOL RATINGS EFM101 EFM102 EFM103 EFM104 EFM105 EFM106 EFM107 UNITS Maximum Recurrent Peak Reverse Voltage VRRM 50 100 150 200 300 400 600 Volts Maximum RMS Voltage VRMS 35 70 105 140 210 280 420 Volts Maximum DC Blocking Voltage VDC 50 100 150 200 300 400 600 Volts Maximum Average Forward Rectified Current at TA = 55oC IO 1.0 Amps IFSM 30 Amps RqJA 85 RqJL 35 Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 4) Typical Junction Capacitance (Note 2) CJ Operating and Storage Temperature Range 0 15 10 pF -55 to + 150 TJ, TSTG C/W 0 C ELECTRICAL CHARACTERISTICS(@TA=25 OC unless otherwise noted) CHARACTERISTICS SYMBOL Maximum Instantaneous Forward Voltage at 1.0A DC Maximum DC Reverse Current at Rated DC Blocking Voltage VF @TA = 25oC o @TA = 100 C Maximum Reverse Recovery Time (Note 1) EFM101 EFM102 EFM103 EFM104 EFM105 EFM106 EFM107 UNITS 0.95 1.25 5.0 IR trr 1.50 mAmps 100 35 Volts 50 nSec NOTES : 1. Reverse Re covery Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts 3. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”. 4. Thermal Resistance : Mounted on PCB. E-mail: [email protected] 1 of 2 Web Site: www.taychipst.com EFM101 THRU EFM107 50V-600V SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER RATINGS AND CHARACTERISTIC CURVES EFM101 THRU EFM107 FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE trr +0.5A 0 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) -0.25A (+) -1.0A NOTES:1 Rise Time = 7ns max. Input Impedance = 1cm SET TIME BASE FOR 5/10 ns/cm 1 megohm. 22 pF. 2. Rise Time = 10ns max. Source Impedance = 50 ohms. 1.0 TJ = 25 .1 .01 10 1.0 4 TJ = 100 FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS M10 10 .1 TJ = 25 Pulse Width = 300uS 1% Duty Cycle .01 .001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) 0 .2 .4 .6 .8 1.0 1.2 1.4 INSTANTANEOUS FORWARD VOLTAGE, (V) FIG. 6 - TYPICAL JUNCTION CAPACITANCE 70 60 50 40 TJ = 25 30 20 10 JUNCTION CAPACITANCE, (pF) FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, (A) AMBIENT TEMPERATURE ( ) ~EF TJ = 150 0 25 50 75 100 125 150175 101 100 0 EFM INSTANTANEOUS FORWARD CURRENT, (A) INSTANTANEOUS REVERSE CURRENT, (uA) FIG. 3 - TYPICAL REVERSE CHARACTERISTICS 1.0 06 (NOTE 2) M1 GENERATOR EF PULSE 05~ 25 Vdc (approx) (-) (-) D.U.T Single Phase Half Wave 60Hz Resistive or Inductive Load M1 (+) 2.0 EF 10 NON-INDUCTIVE AVERAGE FORWARD CURENT, (A) FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 NONINDUCTIVE 1.0A 200 100 0 60 40 20 10 6 TJ = 25 4 2 1 .1 .5 1 2 5 10 20 50 100 200 400 NUMBER OF CYCLES AT 60Hz E-mail: [email protected] .1 2 of 2 .2 .4 1.0 2 4 10 20 40 100 REVERSE VOLTAGE, ( V ) Web Site: www.taychipst.com