TIGER ELECTRONIC CO.,LTD Product specification BU806 MEDIUM Voltage & Fast Switching DarlingtonTransistor DESCRIPTION The devices are silicon Epitaxial Planar NPN power transistors in Darlington configuration with integrated base-emitter speed-up diode, mounted in TO-220 plastic package. They can be used in horizontal output stages of 110 oCRT video displays. Absolute Maximum Ratings ( Ta = 25℃ ) Parameter l Value Unit Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 200 V Emitter-Base Voltage VEBO 6 V Collector Current IC 8.0 A Base Current IB 2.0 A Ptot 60 W Tj 150 o Tstg -55~150 o Total Dissipation at Max. Operating Junction Temperature Storage Temperature C TO-220 C Electrical Characteristics ( Ta = 25℃ ) Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector Cut-off Current ICES VCE=400V, VBEO=0 — — 100 uA Emitter Cut-off Current IEBO VEB=6V, IC=0 — — 3.5 mA Collector-Emitter Sustaining Voltage VCEO IC=100mA, IB=0 200 — — V DC Current Gain hFE(1) VCE=5V, IC=5.0A 200 — — Collector-Emitter Saturation Voltage VCE(sat) IC=5.0A,IB=50mA — — 1.5 V Base-Emitter Saturation Voltage VBE(sat) IC=5.0A,IB=50mA — — 2.4 V Damper Diode Forward Voltage VF IF=4.0A — — 2 V Storage Time TS IC=5A, IB=0.5A — 0.55 — us