TIGER ELECTRONIC CO.,LTD Product specification BUV48A NPN Silicon High Power Ttransistors DESCRIPTION The BUV48A transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line-operated switchmode applications such as: ◆ Switching Regulators ◆ Inverters ◆ Solenoid and Relay Drivers ◆ Motor Controls ◆ Deflection Circuits ABSOLUTE MAXIMUM RATINGS ( Ta = 25℃ ) Parameter Symbol Value Unit Collector-Base Voltage VCBO 1000 V Collector-Emitter Voltage VCEO 450 V Emitter-Base Voltage VEBO 7.0 V Collector Current IC 15 A Base Current IB 5.0 A Ptot 150 W Tj 150 ℃ Tstg -55~150 ℃ Total Dissipation at Max. Operating Junction Temperature Storage Temperature TO-3PN ELECTRICAL CHARACTERISTICS ( Ta = 25℃ ) Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector Cut-off Current ICES VCE=1000V, IE=0 — — 0.5 mA Emitter Cut-off Current IEBO VEB=5.0V, IC=0 — — 0.1 mA Collector-Emitter Sustaining Voltage VCEO IC=100mA, IB=0 450 — — V hFE VCE=5V, IC=8.0A 8 — — IC=8.0A,IB=1.6A — — 1.5 IC=12A,IB=2.4A — — 5.0 VBE(sat) IC=8.0A,IB=1.6A — — 1.6 V — — 2.0 us DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Storage Time VCE(sat) TS VCC=300V, Tp = 30 us V