THINKISEMI BU508A

BU508A
®
BU508A
Pb Free Plating Product
Pb
HIGH VOLTAGE FAST-SWITCHING SILICON NPN POWER TRANSISTOR
DESCRIPTION
・With TO-3PN package
・High voltage
・High speed switching
APPLICATIONS
・For use in horizontal deflection circuits of
large screen colour TV receivers.
PINNING
PIN
3
DESCRIPTION
2
1
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1200
V
VCEO
Collector-emitter voltage
Open base
700
V
VEBO
Emitter-base voltage
Open collector
10
V
IC
Collector current (DC)
8
A
ICM
Collector current (Pulse)
15
A
PC
Collector power dissipation
125
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
MAX
UNIT
1.0
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction case
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
BU508A
®
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA; IC=0
10
V
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA; IB=0
700
V
VCEsat
Collector-emitter saturation voltage
IC=4.5A; IB=2A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=4.5A; IB=2A
1.3
V
ICES
Collector cut-off current
VCE=1500V; VBE=0
TC=125°C
1.0
2.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
hFE
DC current gain
IC=1A ; VCE=5V
ts
Storage time
tf
Fall time
IC=4.5A ; VCC=140V
IB=1.8A; LC=0.9mH
LB=3μH
fT
Transition frequency
IC=0.1A ; VCE=5V
8
7
μs
0.55
μs
7
MHz
Mechanical Dimensions
TO-3PN
Dimensions in Millimeters
Page 2/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/