BU508A ® BU508A Pb Free Plating Product Pb HIGH VOLTAGE FAST-SWITCHING SILICON NPN POWER TRANSISTOR DESCRIPTION ・With TO-3PN package ・High voltage ・High speed switching APPLICATIONS ・For use in horizontal deflection circuits of large screen colour TV receivers. PINNING PIN 3 DESCRIPTION 2 1 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1200 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 10 V IC Collector current (DC) 8 A ICM Collector current (Pulse) 15 A PC Collector power dissipation 125 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 1.0 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction case Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ BU508A ® CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 10 V VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 700 V VCEsat Collector-emitter saturation voltage IC=4.5A; IB=2A 1.0 V VBEsat Base-emitter saturation voltage IC=4.5A; IB=2A 1.3 V ICES Collector cut-off current VCE=1500V; VBE=0 TC=125°C 1.0 2.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=1A ; VCE=5V ts Storage time tf Fall time IC=4.5A ; VCC=140V IB=1.8A; LC=0.9mH LB=3μH fT Transition frequency IC=0.1A ; VCE=5V 8 7 μs 0.55 μs 7 MHz Mechanical Dimensions TO-3PN Dimensions in Millimeters Page 2/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/