SavantIC Semiconductor Product Specification BUH1015HI Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package. ·High voltage. ·High switching speed. APPLICATIONS ·Horizontal deflection for colour TV and monitors. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 10 V IC Collector current (DC) 14 A ICM Collector current -peak 18 A IB Base current 8 A IBM Base current -peak tp<5ms 11 A PC Collector power dissipation TC=25 70 W Tj Junction temperature 150 Tstg Storage temperature -65~150 tp<5ms SavantIC Semiconductor Product Specification BUH1015HI Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 10 V VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 700 V VCEsat Collector-emitter saturation voltage IC=10A; IB=2A 1.5 V VBEsat Base-emitter saturation voltage IC=10A; IB=2A 1.5 V ICES Collector cut-off current VCE=1500V ;VBE=0 Tj=125 0.2 2 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=10A ; VCE=5V Tj=100 7 5 14 Switching times resistive load ts Storage time tf Fall time 1.5 µs 110 ns IC=10A;IB1=2A;IB2=-6A; VCC=400V THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case MAX 1.8 2 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BUH1015HI