Inchange Semiconductor Product Specification BUH713 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High voltage,high speed APPLICATIONS ・Horizontal deflection for colour TV’s and monitors. ・Switching mode power supplies PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1300 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 10 V IC Collector current (DC) 10 A ICM Collector current (Pulse) 20 A IB Base current (DC) 5 A IBM Base current (Pulse) 10 A Ptot Total power dissipation 57 W 150 ℃ -65~150 ℃ MAX UNIT 2.2 ℃/W Tj Tstg TC=25℃ Operating junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification BUH713 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(sus) Collector-emitter sustaining voltage IC=100mA 700 V VEBO Emitter-base breakdown voltage IE=10mA 10 V VCEsat Collector-emitter saturation voltage IC=7A ;IB=1.5A 1.5 V VBEsat Base-emitter saturation voltage IC=7A ;IB=1.5A 1.3 V ICES Collector cut-off current VCE=1300V; VBE=0 Tj=125℃ 1 2 mA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE DC current gain IC=7A ; VCE=5V 2.1 3.1 μs 140 210 ns 8 Switching times ts Storage time IC=7A;IB1=1.5A;IB2=3.5A; VCC=400V tf Fall time 2 Inchange Semiconductor Product Specification BUH713 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3