Transistors SMD Type Product specification 2SD2403 Features High current capacitance. Low collector saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 6 V Collector current IC 3 A Collector current (pulse) * ICP 5 A Base current IB 0.2 A Base current (pulse) * IBP 0.4 A Total power dissipation PT 2 W Junction temperature Tj 150 Tstg -55 to +150 Storage temperature * PW 10 ms, duty cycle 50 % http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors SMD Type Product specification 2SD2403 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = 80 V, IE = 0 100 nA Emitter cutoff current IEBO VEB = 6.0 V, IC = 0 100 nA DC current gain * Base to emitter voltage * Collector saturation voltage Base saturation voltage hFE 1 VCE = 2.0 V, IC =0.1 A 80 hFE 2 VCE = 2.0 V, IC = 1.0 A 100 200 400 VBE VCE = 2.0 V, IC = 0.1 A 630 670 730 mV VCE(sat) 1 IC = 2 A, IB = 0.1 A 150 300 mV VCE(sat) 2 IC = 3 A, IB = 0.15 A 210 500 mV VBE(sat) IC = 2 A, IB = 0.1 A 0.89 1.2 V VCE = 10 V, IE = -0.3 A 130 MHz Output capacitance Cob VCB = 10 V, IE = 0 , f = 1.0 MHz 30 pF Turn-on time ton 150 ns Storage time tstg IC = 1.0 A, VCC= 10 V IB1 = -IB2 = 0.1 A RL = 5.0Ù 652 ns 40 ns Gain bandwidth product fT Fall time tf hFE Classification Marking GX GY GZ hFE 100 200 160 320 200 400 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2