Transistors IC SMD Type PNP Epitaxial Planar Silicon Transistors 2SA1815 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 High cutoffrequency:fT=750MHz typ 0.55 High power gain:PG=25dB typ(f=100MHz) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low collector-to-emitter saturation voltage +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -15 V Collector-emitter voltage VCEO -12 V Emitter-base voltage VEBO -3 V Collector current IC -50 mA Collector dissipation PC 250 mW Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector cutoff current IcBO VCB = -12V , IE = 0 Min Typ Emitter cutoff current IEBO VEB = -2V , IC = 0 DC current Gain hFE VCE = -10V , IC = -5mA Gain bandwidth product Ft VCE = -10V , IC = -5mA 750 60 Cob VCB=-10V,f=1MHz 1.2 Reverse Transfer Capacitance Cob VCB=-10V,f=1MHz 0.9 VCE(sat) IC=-10mA,IB=-1mA -0.1 VCE=-10V,IC=-10mA,f=100MHz 25 Power Gain PG Unit -0.1 ìA -0.1 ìA 270 Output Capacitance C-E Saturation Voltage Max MHz 1.6 pF pF -0.3 V dB hFE Classification JS Marking Rank 3 4 5 hFE 60 to 120 90 to 180 135 to 270 www.kexin.com.cn 1