TYSEMI 2SD1623

Transistors
SMD Type
Product specification
2SD1623
Features
Adoption of FBET, MBIT processes.
Low collector-to-emitter saturation voltage.
Large current capacity and wide ASO.
Fast switching speed.
The ultraminiature package facilitates
higher-density mounting, thus allows the applied
hybrid IC’
s further miniaturization.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
2
A
Collector current (pulse)
ICP
4
A
PC
0.5
W
W
Collector dissipation
PC *
1.3
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* Mounted on ceramic board(250mm2X0.8mm)
http://www.twtysemi.com
[email protected]
4008-318-123
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Transistors
SMD Type
Product specification
2SD1623
Electrical Characteristics Ta = 25
Max
Unit
Collector cutoff current
Parameter
Symbol
ICBO
VCB = 50 V, IE=0
100
nA
Emitter cutoff current
IEBO
VEB = 4 V, IC=0
100
nA
DC current gain
hFE
VCE = 2 V , IC = 100 mA
fT
VCE = 10 V , IC = 50 mA
150
MHz
Cob
VCB = 10 V , f = 1.0MHz
12
pF
Gain bandwidth product
Output capacitance
Testconditons
Min
Typ
100
560
Collector-emitter saturation voltage
VCE(sat) IC = 1 A , IB = 50 mA
0.15
0.4
V
Base-emitter saturation voltage
VBE(sat) IC = 1 A , IB = 50 mA
0.9
1.2
V
Collector-base breakdown voltage
V(BR)CBO IC = 10ìA , IE = 0
60
V
Collector-emitter breakdown voltage
V(BR)CEO IC = 1mA , RBE =
50
V
Emitter-base breakdown voltage
V(BR)EBO IE = 10ìA , IC = 0
6
V
Turn-on timie
ton
60
ns
Storage time
tstg
550
ns
Turn-off time
tf
30
ns
hFE Classification
DF
Marking
Rank
R
S
T
U
hFE
100 200
140 280
200 400
280 560
http://www.twtysemi.com
[email protected]
4008-318-123
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