Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB1073 Features Low collector-emitter saturation voltage VCE(sat) Large peak collector current ICP Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -7 V Peak collector current ICP -4 A Collector current IC -7 mA Collector power dissipation PC 1 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base voltage VCBO IC = -10 ìA, IE = 0 -30 Collector-emitter voltage VCEO IC = -1 mA, IB = 0 -20 V Emitter-base voltage VEBO IE = -10 ìA, IC = 0 -7 V Collector-base cutoff current ICBO VCB = -30 V, IE = 0 Emitter-base cutoff current IEBO VEB = -7 V, IC = 0 Forward current transfer ratio hFE VCE = -2 V, IC = -2 A VCE(sat) IC = -3 A, IB = - 0.1 A Collector-emitter saturation voltage Transition frequency fT Collector output capacitance Cob VCB = -6 V, IE = 50 mA, f = 200 MHz VCB = -20 V, IE = 0, f = 1 MHz V 120 -0.1 ìA -0.1 ìA 315 -0.6 -1.0 V 120 MHz 4 pF hFE Classification Marking IP IQ hFE 120 205 180 315 www.kexin.com.cn 1