KEXIN 2SB1073

Transistors
SMD Type
Silicon PNP Epitaxial Planar Type
2SB1073
Features
Low collector-emitter saturation voltage VCE(sat)
Large peak collector current ICP
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-30
V
Collector-emitter voltage
VCEO
-20
V
Emitter-base voltage
VEBO
-7
V
Peak collector current
ICP
-4
A
Collector current
IC
-7
mA
Collector power dissipation
PC
1
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base voltage
VCBO
IC = -10 ìA, IE = 0
-30
Collector-emitter voltage
VCEO
IC = -1 mA, IB = 0
-20
V
Emitter-base voltage
VEBO
IE = -10 ìA, IC = 0
-7
V
Collector-base cutoff current
ICBO
VCB = -30 V, IE = 0
Emitter-base cutoff current
IEBO
VEB = -7 V, IC = 0
Forward current transfer ratio
hFE
VCE = -2 V, IC = -2 A
VCE(sat) IC = -3 A, IB = - 0.1 A
Collector-emitter saturation voltage
Transition frequency
fT
Collector output capacitance
Cob
VCB = -6 V, IE = 50 mA, f = 200 MHz
VCB = -20 V, IE = 0, f = 1 MHz
V
120
-0.1
ìA
-0.1
ìA
315
-0.6
-1.0
V
120
MHz
4
pF
hFE Classification
Marking
IP
IQ
hFE
120 205
180 315
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