TYSEMI H8050

Transistors
SMD Type
Product specification
H8050
SOT-89
Unit: mm
+0.1
-0.1
+0.1
-0.1
4.50
■ Features
1.50
+0.1
1.80-0.1
+0.1
2.50-0.1
● Collector Current: IC=1.5A
2
3
+0.1
0.53-0.1
+0.1
0.44-0.1
+0.1
0.40-0.1
+0.1
2.60-0.1
+0.1
0.48-0.1
+0.1
0.80-0.1
1
+0.1
4.00-0.1
● Collector Power Dissipation: PC=0.5W
+0.1
3.00-0.1
1. Base
2. Collector
3. Emiitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
25
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
1.5
A
Collector power dissipation
PC
0.5
W
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-55 to +150
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
VCBO
IC= 100μA, IE=0
40
V
Collector-emitter breakdown voltage
VCEO
IC= 0.1mA, IB=0
25
V
Emitter-base breakdown voltage
VEBO
IE= 100μA, IC=0
5
V
Collector cut-off current
ICBO
VCB= 40 V,IE=0
0.1
μA
Collector cut-off current
ICEO
VCE= 20V, IB=0
0.1
μA
Emitter cut-off current
IEBO
VEB= 5V, IC=0
0.1
μA
DC current gain
hFE
VCE= 1V, IC= 100mA
85
VCE= 1V, IC= 800mA
40
400
Collector-emitter saturation voltage
VCE(sat) IC=800mA, IB= 80mA
0.5
V
Base-emitter saturation voltage
VBE(sat) IC=800mA, IB=80mA
1.2
V
Base-emitter on voltage
VBE(on) Ic=1V,VCE=10mA
Base-emitter positive favor voltage
VBEF
IB=1A
output capacitance
Cob
VCB=10V,IE=0,f=1MHz
Transition frequency
fT
VCE= 10V, IC=50mA
100
1
V
1.55
V
15
pF
MHz
■ hFE Classification
Rank
B
C
D
D3
hFE
85 ~ 160
120~200
160~300
300~400
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
Transistors
SMD Type
Product specification
H8050
s
■ Typical Characteristics
1000
0.5
0.4
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
VCE = 1V
IB = 3.0mA
IB = 2.5mA
IB = 2.0mA
0.3
IB = 1.5mA
0.2
IB = 1.0mA
0.1
100
10
IB = 0.5mA
0
0.4
0.8
1.2
1.6
1
0.1
2.0
1
VCE[V], COLLECTOR-EMITTER VOLTAGE
1000
Figure 2. DC current Gain
10000
100
IC = 10 IB
VCE = 1V
IC[mA], COLLECTOR CURRENT
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
100
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
V BE(sat)
1000
100
V CE(sat)
10
0.1
1
10
100
10
1
0.1
0.0
1000
0.2
0.4
0.6
0.8
1.0
1.2
VBE[V], BASE-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
1000
fT[MHz],
CURRENT GAIN BANDWIDTH PRODUCT
1000
IE = 0
f = 1MHz
Cob [pF], CAPACITANCE
10
100
10
1
1
10
100
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
http://www.twtysemi.com
[email protected]
VCE = 10V
100
10
1
1
10
100
400
IC[mA], COLLECTOR CURRENT
Figure 6. Current Gain Bandwidth Product
4008-318-123
2 of 2