TYSEMI 2SC3357

Transistors
IC
SMD Type
Product specification
2SC3357
Features
Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @VCE = 10 V,
IC = 7 mA, f = 1.0 GHz
NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V,
IC = 40 mA, f = 1.0 GHz
High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
3.0
V
IC
100
mA
W
Collector current
Total power dissipation
PT*
1.2
Junction temperature
Tj
150
Storage temperature
Tstg
-65 to +150
Thermal Resistance
Rth(j-a)*
62.5
/W
2
* mounted on 16 cm X 0.7 mm(t) Ceramic Substrate
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cutoff current
Emitter cutoff current
Testconditons
ICBO
VCB = 10V,IE=0
IEBO
VEB = 1.0V,IC=0
Min
Unit
1.0
A
1.0
A
hFE *1
VCE =10V,Ic=20mA
Insertion Power Gain
|S21e|2
VCE = 10 V, IC = 20 mA, f = 1.0 GHz
9
VCE = 10 V, IC = 7 mA, f = 1.0 GHz
1.1
VCE = 10 V, IC = 40 mA, f = 1.0 GHz
1.8
3.0
dB
VCB = 10 V, IE = 0, f = 1.0 MHz
0.65
1.0
pF
VCE = 10V ,Ic=20mA
6.5
NF
Output Capacitance
Cob
Transition frequency
fT
*1 Pulse Measurement PW
350 ms, Duty Cycle
120
Max
DC current gain
Noise Figure
50
Typ
250
dB
dB
GHz
2%
*2 The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitnace bridge.
hFE Classification
Marking
RH
RF
RE
Rank
RH
RF
RE
hFE
20 100
80 160
125 250
http://www.twtysemi.com
[email protected]
4008-318-123
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