IC Transistors SMD Type NPN Silicon RF Transistor 2SC3357 Features Low Noise and High Gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3.0 V IC 100 mA W Collector current PT* 1.2 Junction temperature Tj 150 Storage temperature Tstg -65 to +150 Thermal Resistance Rth(j-a)* 62.5 Total power dissipation /W 2 * mounted on 16 cm X 0.7 mm(t) Ceramic Substrate Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current Emitter cutoff current Testconditons ICBO VCB = 10V,IE=0 IEBO VEB = 1.0V,IC=0 Min Unit 1.0 A 1.0 A hFE *1 VCE =10V,Ic=20mA Insertion Power Gain |S21e|2 VCE = 10 V, IC = 20 mA, f = 1.0 GHz 9 VCE = 10 V, IC = 7 mA, f = 1.0 GHz 1.1 VCE = 10 V, IC = 40 mA, f = 1.0 GHz 1.8 3.0 dB VCB = 10 V, IE = 0, f = 1.0 MHz 0.65 1.0 pF VCE = 10V ,Ic=20mA 6.5 NF Output Capacitance Cob Transition frequency fT *1 Pulse Measurement PW 350 ms, Duty Cycle 120 Max DC current gain Noise Figure 50 Typ 250 dB dB GHz 2% *2 The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitnace bridge. hFE Classification Marking RH RF RE Rank RH RF RE hFE 20 100 80 160 125 250 www.kexin.com.cn 1