Transistors IC SMD Type PNP Epitaxial Silicon Transistor 2SA1977 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 High gain 0.55 High fT :fT = 8.5 GHz TYP. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 | S21e |2 = 12.0 dB TYP. @f = 1.0 GHz, VCE = -8 V, IC = -20 mA +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 High-speed switching characterstics 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -20 V Collector-emitter voltage VCEO -12 V Emitter-base voltage VEBO -3.0 V Collector current IC -50 mA Total power dissipation PT 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = -10 V -0.1 ìA Emitter cutoff current IEBO VEB = -1 V -0.1 ìA DC current gain hFE VCE = -8 V, IC = -20 mA 20 fT VCE = -8 V, IC = -20 mA, f = 1 GHz 6.0 Gain Bandwidth Product Collector Capacitance Insertion Power Gain Cre* | S21e | Noise Figure NF VCB = -10 V, IE = 0, f = 1 MHz 2 VCE = -8 V, IC = -20 mA, f = 1.0 GHz VCE = -8 V, IC = -3 mA, f = 1 GHz 100 8.5 0.5 8.0 V 1 12.0 1.5 V MHz 3 pF *.Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal. hFE Classification Marking T92 Rank FB hFE 20 100 www.kexin.com.cn 1