Transistors IC SMD Type Product specification 2SC3585 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 NF 1.8 dB TYP. @f = 2.0 GHz 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 Ga 9 dB TYP. @f = 2.0 GHz 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO 1.5 V Collector current IC 35 mA Total power dissipation PT 200 mW Junction temperature Tj 150 Storage temperature Tstg -65 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = 10 V, IE = 0 1.0 ìA Emitter cutoff current IEBO VEB = 1V, IC = 0 1.0 ìA DC current gain hFE*1 VCE = 6 V, IC =10 mA Gain Bandwidth Product fT Feed-Back Capacitance Cre *2 2 Insertion Power Gain |S21e| Maximum Available Gain MAG Noise Figure NF *1. Pulse Measurement PW 350ìs, Duty Cycle 50 100 VCE = 6 V, IC = 10 mA 10 VCB = 10 V, IE = 0, f = 1.0 MHz 0.3 VCE = 6 V, IC = 10 mA, f = 2.0 GHz 6.0 250 GHz 0.8 8.0 VCE = 6 V, IC = 10 mA, f = 2.0 GHz 10 VCE = 6 V, IC = 5 mA, f = 2.0 GHz 1.8 pF dB dB 3.0 dB 2% *2.The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge. hFE Classification Marking R43 R44 R45 Rank R43/Q R44/R R45/S hFE 50 100 80 160 125 250 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1