Transistors Diodes IC SMD Type Product specification 2SA1978 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 High fT (fT=5.5GHz TYP). 0.4 3 Features 1 0.55 High gain |S21e|2=10.0dB TYP.@f=1.0GHz,Vce=-10V,Ic=-15mA 2 High-speed switching characterstics +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -20 V Collector-emitter voltage VCEO -12 V Emitter-base voltage VEBO -3.0 V Collector current IC -50 mA Total power dissipation PT 200 mW Junction temperature Tj 150 Storage temperature Tstg -65 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = -10V -10 ìA Emitter cutoff current IEBO VEB = -2V -10 ìA DC current gain hFE VCE =-10V,Ic=-15mA 20 40 VCE = -10V ,Ic=-15mA 4.0 5.5 Gain bandwidth product Collector capacitance fT Cre* Insertion Power Gain VCB = -10V , IE = 0 , f = 1MHz 0.5 |S21e|2 Vce=-10V,Ic=-15mA,.f=1.0GHZ Noise Figure NF 8.0 Vce=-10V,Ic=-3mA,.f=1GHZ 100 GHz 1 10.0 2.0 pF dB 3 dB *.Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal. hFE Classification Marking T93 Rank FB hFE 20 100 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1