Transistors IC SMD Type Product specification 2SC5310 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Large current capacitance. 0.55 Adoption of FBET, MBIT processes. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Low collector-to-emitter saturation voltage. +0.05 0.1-0.01 +0.1 0.97-0.1 High-speed switching. 0-0.1 +0.1 0.38-0.1 Ultrasmall package facilitates miniaturization in end products. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 6 V Collector current IC 1 A Collector current (pulse) ICP 3 A Base current IB 200 mA Collector dissipation * PC 250 mW Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 * Mounted on a glass-epoxy board (20×30×1.6mm) http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC SMD Type Product specification 2SC5310 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector cutoff current ICBO VCB = 20V, IE=0 Emitter cutoff current IEBO VEB = 3V, IC=0 DC current gain hFE VCE =2V , IC = 100mA fT VCE = 10V , IC = 50mA Cob Gain bandwidth product Output capacitance Min Typ 135 Max Unit 0.1 ìA 0.1 ìA 400 150 MHz VCB = 10V , f = 1.0MHz 19 Collector-emitter saturation voltage VCE(sat) IC = 500mA , IB = 25mA 100 200 mV pF Base-emitter saturation voltage VBE(sat) IC = 500mA , IB = 25mA 0.85 1.2 V Collector-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 30 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 25 V Emitter-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 6 V Turn-on time ton 60 ns Storage time tstg 500 ns tf 25 ns Fall time hFE Classification NN Marking Rank 5 6 hFE 135 270 200 400 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2