Transistors IC SMD Type Product specification 2SD1119 Features Low collector-emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 7 V Collector current IC 3 A Peak collector current ICP 5 A Collector power dissipation PC 1 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-emitter voltage VCEO IC = 1 mA, IB = 0 25 V Emitter-base voltage VEBO IE = 10 ìA, IC = 0 7 V Collector-base cutoff current ICBO VCB = 10 V, IB = 0 Forward current transfer ratio hFE Collector-emitter saturation voltage 0.1 VCE = 2 V, IC = 0.5 A 230 VCE = 2 V, IC = 2 A 150 600 VCE(sat) IC = 3 A, IB = 0.1 A Transition frequency fT Collector output capacitance Cob 1 VCB = 6 V, IE = -50 mA, f = 200 MHz ìA 150 VCB = 20 V, IE = 0, f = 1 MHz V MHz 50 pF hFE Classification T Marking Rank Q R hFE 230 380 340 600 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1