TYSEMI 2SD1119

Transistors
IC
SMD Type
Product specification
2SD1119
Features
Low collector-emitter saturation voltage VCE(sat).
Satisfactory operation performances at high efficiency with
the lowvoltage power supply.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
25
V
Emitter-base voltage
VEBO
7
V
Collector current
IC
3
A
Peak collector current
ICP
5
A
Collector power dissipation
PC
1
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-emitter voltage
VCEO
IC = 1 mA, IB = 0
25
V
Emitter-base voltage
VEBO
IE = 10 ìA, IC = 0
7
V
Collector-base cutoff current
ICBO
VCB = 10 V, IB = 0
Forward current transfer ratio
hFE
Collector-emitter saturation voltage
0.1
VCE = 2 V, IC = 0.5 A
230
VCE = 2 V, IC = 2 A
150
600
VCE(sat) IC = 3 A, IB = 0.1 A
Transition frequency
fT
Collector output capacitance
Cob
1
VCB = 6 V, IE = -50 mA, f = 200 MHz
ìA
150
VCB = 20 V, IE = 0, f = 1 MHz
V
MHz
50
pF
hFE Classification
T
Marking
Rank
Q
R
hFE
230 380
340 600
http://www.twtysemi.com
[email protected]
4008-318-123
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