TYSEMI 2SD2200

Transistors
IC
SMD Type
Product specification
2SD2200
TO-263
1 .2 7 -0+ 0.1.1
Features
Surface mount type device making the following possible.
Unit: mm
+0.1
1.27-0.1
+0.2
4.57-0.2
Low collector-to-emitter saturation voltage.
5 .2 8 -0+ 0.2.2
+0.1
0.81-0.1
2.54
2.54
+0.2
-0.2
+0.1
5.08-0.1
1 5 .2 5 -0+ 0.2.2
0.1max
+0.1
1.27-0.1
2 .5 4 -0+ 0.2.2
8 .7 -0+ 0.2.2
5 .6 0
Large current capacity.
+0.2
0.4-0.2
1 : Base
2 : Collector
3 : Emitter
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
90
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
5
A
Collector current (pulse)
ICP
9
A
Collector dissipation
PC
TC = 25
1.65
W
30
W
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
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4008-318-123
1 of 2
Transistors
IC
SMD Type
Product specification
2SD2200
Electrical Characteristics Ta = 25
Max
Unit
Collector cutoff current
Parameter
Symbol
IcBO
VCB = 80V , IE = 0
0.1
mA
Emitter cutoff current
IEBO
VEB = 4V , IC = 0
0.1
mA
DC current Gain
hFE
Gain bandwidth product
Testconditons
Min
VCE = 2V , IC = 1A
70
VCE = 2V , IC = 3A
30
VCE = 5V , IC = 1A
fT
Typ
280
20
VCE(sat) IC = 3A , IB = 0.3A
Collector-emitter saturation voltage
MHz
0.4
V
Collector-to-base breakdown voltage
V(BR)CBO IC = 1mA , IE = 0
90
V
Collector-to-emitter breakdown voltage
V(BR)CEO IC = 1mA , RBE =
80
V
Emitter-base breakdown voltage
V(BR)EBO IE = 1mA , IC = 0
6
V
Turn-on time
ton
0.1
ìs
Storage time
tstg
1.2
ìs
tf
0.4
ìs
Fall time
hFE Classification
Rank
Q
R
hFE
70 140
100 200
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S
140
280
[email protected]
4008-318-123
2 of 2