TYSEMI 2SD965-Q

Product specification
2SD965-Q
SOT-89
Unit:mm
1.50 ±0.1
4.50±0.1
1.80±0.1
2.50±0.1
4.00±0.1
■ Features
● Low collector-emitter saturation voltage VCE(sat)
● Satisfactory operation performances at high efficiency with
3.00±0.1
0.80±0.1
0.53±0.1
0.44±0.1
2.60±0.1
0.48±0.1
3
2
0.40±0.1
1
the low-voltage power supply.
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
5
A
Collector power dissipation
PC
0.5
W
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-55 to +150
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO IC=100μA, IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO IC= 1mA. IB=0
20
V
Emitter-base breakdown voltage
V(BR)EBO IE= 10μA, IC=0
7
V
Collector Cut-off Current
ICBO
VCB=10V, IE=0
0.1
μA
Emitter Cut-off Current
IEBO
VEB = 7V, IC = 0
0.1
μA
DC current gain
hFE
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
VCE(sat)
Cob
fT
VCE = 2 V, IC = 0.5 A
230
VCE = 2 V, IC = 2A
150
380
IC = 2A, IB = 0.1 A
1
VCB = 20 V, IE = 0, f = 1 MHz
VCB = 6 V, IC = 50mA
50
150
V
pF
MHz
■ Marking
Marking
D965Q
http://www.twtysemi.com
[email protected]
4008-318-123
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Product specification
2SD965-Q
■ Electrical Characteristics Curves
http://www.twtysemi.com
[email protected]
4008-318-123
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