TYSEMI 2SJ452

SMD Type
Product specification
2SJ452
Application
Low frequency power switching
Features
•
•
•
•
Low on-resistance.
Low drive power
2.5 V gate drive device.
Small package (MPAK).
Outline
MPAK
3
1
2
D
1. Source
2. Gate
3. Drain
G
S
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
SMD Type
Product specification
2SJ452
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
–50
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–0.2
A
–0.4
A
1
Drain peak current
I D(pulse)*
Channel dissipation
Pch
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW ≤ 10 µs, duty cycle ≤ 1%
Marking is "ZM–".
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
–50
—
—
V
I D = –100 µA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
I G = ±100 µA, VDS = 0
Zero gate voltage drain current I DSS
—
—
–1.0
µA
VDS = –40 V, VGS = 0
Gate to source leak current
I GSS
—
—
±2.0
µA
VGS = ±16 V, VDS = 0
Gate to source cutoff voltage
VGS(off)
–0.5
—
–1.5
V
I D = –10 µA, VDS = –5 V
Static drain to source on state
resistance
RDS(on)1
—
5.0
7.0
Ω
I D = –100 mA
VGS = –4 V*1
Static drain to source on state
resistance
RDS(on)2
—
7.5
12.0
Ω
I D = –40 mA
VGS = –2.5 V*1
Foward transfer admittance
|yfs|
0.1
0.19
—
S
I D = –100 mA*1
VDS = –10 V
Input capacitance
Ciss
—
1.1
—
pF
VDS = –10 V
Output capacitance
Coss
—
15.7
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
0.12
—
pF
f = 1 MHz
Turn-on delay time
t d(on)
—
0.45
—
µs
VGS = –10 V, ID = –0.1 A
Rise time
tr
—
1.3
—
µs
RL = 300 Ω
Turn-off delay tiem
t d(off)
—
8.4
—
µs
Fall time
tf
—
5.6
—
µs
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2