Transistors IC SMD Type Type SMD Product specification 2SK2414 Features TO-252 Low On-Resistance MAX. (@ VGS = 10 V, ID = 5.0 A) RDS(on)2 = 95 m MAX. (@ VGS = 4 V, ID = 5.0 A) +0.15 1.50-0.15 RDS(on)1 = 70 m +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 High Avalanche Capability Ratings 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 Built-in G-S Gate Protection Diodes +0.15 0.50-0.15 +0.2 9.70-0.2 Low Ciss Ciss = 840 pF TYP. 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS 20 V ID 10 A Drain current Idp * ±40 A Power dissipation PD 20 W Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Symbol Testconditons IDSS VDS=60V,VGS=0 IGSS VGS= 20V,VDS=0 Min RDS(on) Max Unit 10 A 10 VGS(off) VDS=10V,ID=1mA Yfs Typ VDS=10V,ID=5A 1.0 1.6 7.0 12 2.0 A V S VGS=10V,ID=5A 52 70 m VGS=4V,ID=5A 68 95 m Ciss VDS=10V,VGS=0,f=1MHZ 860 pF Output capacitance Coss 440 pF Reverse transfer capacitance Crss 110 pF Turn-on delay time ton 15 ns 90 ns 75 ns 35 ns Rise time tr Turn-off delay time toff Fall time tf http://www.twtysemi.com ID=5A,VGS(on)=10V,RG=10 ,VDD=30V [email protected] 4008-318-123 1 of 1