TYSEMI 2SK2414

Transistors
IC
SMD Type
Type
SMD
Product specification
2SK2414
Features
TO-252
Low On-Resistance
MAX. (@ VGS = 10 V, ID = 5.0 A)
RDS(on)2 = 95 m
MAX. (@ VGS = 4 V, ID = 5.0 A)
+0.15
1.50-0.15
RDS(on)1 = 70 m
+0.15
6.50-0.15
+0.2
5.30-0.2
Unit: mm
+0.1
2.30-0.1
+0.8
0.50-0.7
High Avalanche Capability Ratings
2.3
+0.1
0.60-0.1
3.80
+0.15
5.55-0.15
0.127
max
+0.25
2.65-0.1
+0.1
0.80-0.1
+0.28
1.50-0.1
Built-in G-S Gate Protection Diodes
+0.15
0.50-0.15
+0.2
9.70-0.2
Low Ciss Ciss = 840 pF TYP.
1 Gate
+0.15
4.60-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
20
V
ID
10
A
Drain current
Idp *
±40
A
Power dissipation
PD
20
W
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Symbol
Testconditons
IDSS
VDS=60V,VGS=0
IGSS
VGS= 20V,VDS=0
Min
RDS(on)
Max
Unit
10
A
10
VGS(off) VDS=10V,ID=1mA
Yfs
Typ
VDS=10V,ID=5A
1.0
1.6
7.0
12
2.0
A
V
S
VGS=10V,ID=5A
52
70
m
VGS=4V,ID=5A
68
95
m
Ciss
VDS=10V,VGS=0,f=1MHZ
860
pF
Output capacitance
Coss
440
pF
Reverse transfer capacitance
Crss
110
pF
Turn-on delay time
ton
15
ns
90
ns
75
ns
35
ns
Rise time
tr
Turn-off delay time
toff
Fall time
tf
http://www.twtysemi.com
ID=5A,VGS(on)=10V,RG=10 ,VDD=30V
[email protected]
4008-318-123
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