SMD Type Product specification 2SK3116 TO-263 +0.1 1.27-0.1 Features Low gate charge Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 RDS(on) = 1.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low on-state resistance MAX. (VGS = 10 V, ID = 3.75 A) Avalanche capability ratings +0.2 2.54-0.2 +0.2 15.25-0.2 30 V +0.1 0.81-0.1 2.54 +0.2 2.54-0.2 Gate voltage rating +0.2 8.7-0.2 QG = 26 nC TYP. (ID = 7.5 A, VDD = 450 V, VGS = 10 V) 5.08 1 Gate +0.2 0.4-0.2 +0.1 -0.1 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS 600 V Gate to source voltage VGSS 30 V ID 7.5 A Idp * 30 A Drain current Power dissipation TA=25 1.5 PD Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW W 70 TC=25 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Drain cut-off current IDSS VDS=600V,VGS=0 Gate leakage current IGSS VGS= 30V,VDS=0 VGS(off) VDS=10V,ID=1mA 2.5 Yfs VDS=10V,ID=3.75A 2.0 RDS(on) VGS=10V,ID=3.75A Gate to source cut off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Typ Max Unit 100 A 100 3.5 A V S 0.9 1.2 1100 pF 200 pF Crss 20 pF Turn-on delay time ton 18 ns Rise time tr 15 ns Turn-off delay time toff 50 ns Fall time tf 15 ns http://www.twtysemi.com VDS=10V,VGS=0,f=1MHZ ID=3.75A,VGS(on)=10V,VDD=150V,RG=1 0 ,RL=50 [email protected] 4008-318-123 1 of 1