Transistors IC MOSFET SMD Type Product specification 2SK2484 TO-263 1 .2 7 -0+ 0.1.1 Features Low On-state Resistance:RDS(on)=2.8 max.(VGS=10V,ID=3.0A) Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 2 .5 4 -0+ 0.2.2 8 .7 -0+ 0.2.2 High Avalanche Capability Ratings 5 .6 0 Low Ciss Ciss=1200pF TYP +0.2 0.4-0.2 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to Source Voltage Parameter VDSS 900 V Gate to Source Voltage VGSS 30 V ID(DS) 5 A ID(pulse) 10 A Drain Current(DC) Drain Current(pulse) *1 Total Power Dissipation Ta = 25 1.5 PT W 75 Total Power Dissipation TC = 25 Channel Temperature Tch 150 Storage temperature Tstg -55 to +150 Single Avalanche Current *2 IAS 5 A Single Avalanche Energy *2 EAS 75 mJ *1. PW 10ìs,Dduty cycle 1%. *2.Starting Tch=25 ,RG=25Ù,VGS=20V http://www.twtysemi.com 0 [email protected] 4008-318-123 1of 2 Transistors IC MOSFET SMD Type Product specification 2SK2484 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Drain to Source On-state Resistance RDS(on) VGS = 10 V, ID = 3.0 A Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 2.5 Yfs VDS = 20 V, ID = 3.0 A 2.0 Forward Transfer Admittance Typ 2.2 Max Unit 2.8 Ù 3.5 V S Drain Cut-off Current IDSS VDS = VDSS, VGS = 0 Gate Leakage Current IGSS VGS = ±30 V, VDS = 0 Input Capacitance Ciss VDS = 10 V 1200 pF Output Capacitance Coss VGS = 0 170 pF Feedback Capacitance Crss f = 1 MHz 30 pF Turn-on Delay Time td(on) Rise Time Turn-off Delay Time Fall Time 100 100 ìA nA ID = 3.0 A 20 ns tr VGS = 10 V 10 ns td(off) VDD = 150 V 70 ns ns tf RG = 10 Ù 15 Total Gate Charge Qg ID = 5.0 A 40 Gate-Source Charge Qgs VDD = 450 V 7 Qgd nC VGS = 10 V 17 Diode Forward Voltage VF(S-D) IF = 5.0 A, VGS = 0 1.0 V Reverse Recovery Time trr IF = 5.0 A, VGS = 0 670 ns Reverse Recovery Charge Qrr di/dt = 50 A/ ìs 3.5 ìC Gate-Drain Charge http://www.twtysemi.com [email protected] 4008-318-123 2 of 2