IC SMD Type Product specification 2SK2887 Features TO-252 Unit: mm Low on-resistance. Fast switching speed. +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 2.30-0.1 +0.8 0.50-0.7 Easy to parallel. 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 Easily designed drive circuits. +0.15 0.50-0.15 30V. +0.2 9.70-0.2 Gate-source voltage (VGSS) guaranteed to be 3.80 Wide SOA (safe operating area). 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 200 V Gate to source voltage VGSS 30 V ID 3 A Idp * 12 A W Drain current Power dissipation PD 20 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain to source breakdown voltage VDSS ID=1mA,VGS=0 Drain cut-off current IDSS VDS=200V,VGS=0 Gate leakage current Gate threshold voltage Forward transfer admittance Drain to source on-state resistance Min VGS= 30V,VDS=0 VDS=10V,ID=1mA 2.0 Yfs VDS=10V,ID=1.5A 0.6 RDS(on) VGS=10V,ID=1.5A Output capacitance Coss 100 4.0 1.5 0.7 VDS=10V,VGS=0,f=1MHZ Unit V 100 IGSS Ciss Max 200 VGS(th) Input capacitance Typ A nA V S 0.9 230 pF 100 pF Reverse transfer capacitance Crss 35 pF Turn-on delay time ton 10 ns Rise time tr 12 ns Turn-off delay time toff Fall time tf Reverse recovery time trr Reverse recovery charge http://www.twtysemi.com ID=1.5A,VGS(on)=10V,RL=68 ,RG=10 ,VDD=100V IDR=3A,VGS=0V,di/dt=100A/ Qrr [email protected] s 26 ns 34 ns 96 ns 0.56 4008-318-123 c 1 of 1