TYSEMI 2SK3018

MOSFET
SMD Type
Product specification
2SK3018
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
● Low on-resistance.
+0.1
1.3-0.1
+0.1
2.4-0.1
■ Features
0.4
3
1
● Fast switching speed.
0.55
Drain
2
+0.1
0.95-0.1
+0.1
1.9-0.1
● Drive circuits can be simple.
+0.1
0.97-0.1
● Silicon N-channel MOSFET
+0.05
0.1-0.01
Gate
Protection
Diode
0-0.1
∗ Gate
+0.1
0.38-0.1
1.Base
1.
Gate
2.Emitter
2.
Source
3.
Drain
3.collector
Source
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
±20
V
Drain current
Total power dissipation
ID
100
IDP*1
400
PD *2
2
mA
200
mW
℃/W
Rth(ch-a) *
625
Channel Temperature
Tch
150
℃
Storage temperature
Tstg
-55 to +150
℃
Channel to ambient
*1. Pw≤10ìs, duty cycle≤1%.
*2. With each pin mounted on the recommended lands.
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4008-318-123
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MOSFET
SMD Type
Product specification
2SK3018
■ Electrical Characteristics Ta = 25℃
Parameter
Gate-source leakage
Drain-source Breakdown voltage
Zero gate voltage drain current
Symbol
IGSS
Testconditons
Min
Typ
VGS =±20 V , VDS = 0 V
V(BR)DSS ID= 10 ìA, VGS = 0V
IDSS
VDS = 30 V, VGS = 0V
Gate threshold voltage
VGS(th)
VDS = 3 V, ID= 100 ìA
Static drain-source on-state resistance
RDS(on)
ID= 10 mA, VGS = 4V
ID= 1mA, VGS = 2.5V
Max
Unit
±1
ìA
30
V
0.8
5
7
ìA
1.5
V
8
13
Ω
Forward transfer admittance
Yfs
VDS = 3 V, ID= 10 mA
Input capacitance
Ciss
VDS = 5 V,
13
pF
Output capacitance
Coss
VDS = 0 V,
9
pF
Reverse transfer capacitance
Crss
f= 1MHz
4
pF
Turn-on delay time
td(on)
ID= 10 mA, VDD= 5 V,
15
ns
tr
VGS= 5 V,
35
ns
td(off)
RL=500Ω
80
ns
RG= 10Ω
80
ns
Rise time
Turn-off time
Fall time
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tr
[email protected]
20
1
mS
4008-318-123
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