MOSFET SMD Type Product specification 2SK3018 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Low on-resistance. +0.1 1.3-0.1 +0.1 2.4-0.1 ■ Features 0.4 3 1 ● Fast switching speed. 0.55 Drain 2 +0.1 0.95-0.1 +0.1 1.9-0.1 ● Drive circuits can be simple. +0.1 0.97-0.1 ● Silicon N-channel MOSFET +0.05 0.1-0.01 Gate Protection Diode 0-0.1 ∗ Gate +0.1 0.38-0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 V Drain current Total power dissipation ID 100 IDP*1 400 PD *2 2 mA 200 mW ℃/W Rth(ch-a) * 625 Channel Temperature Tch 150 ℃ Storage temperature Tstg -55 to +150 ℃ Channel to ambient *1. Pw≤10ìs, duty cycle≤1%. *2. With each pin mounted on the recommended lands. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 MOSFET SMD Type Product specification 2SK3018 ■ Electrical Characteristics Ta = 25℃ Parameter Gate-source leakage Drain-source Breakdown voltage Zero gate voltage drain current Symbol IGSS Testconditons Min Typ VGS =±20 V , VDS = 0 V V(BR)DSS ID= 10 ìA, VGS = 0V IDSS VDS = 30 V, VGS = 0V Gate threshold voltage VGS(th) VDS = 3 V, ID= 100 ìA Static drain-source on-state resistance RDS(on) ID= 10 mA, VGS = 4V ID= 1mA, VGS = 2.5V Max Unit ±1 ìA 30 V 0.8 5 7 ìA 1.5 V 8 13 Ω Forward transfer admittance Yfs VDS = 3 V, ID= 10 mA Input capacitance Ciss VDS = 5 V, 13 pF Output capacitance Coss VDS = 0 V, 9 pF Reverse transfer capacitance Crss f= 1MHz 4 pF Turn-on delay time td(on) ID= 10 mA, VDD= 5 V, 15 ns tr VGS= 5 V, 35 ns td(off) RL=500Ω 80 ns RG= 10Ω 80 ns Rise time Turn-off time Fall time http://www.twtysemi.com tr [email protected] 20 1 mS 4008-318-123 2 of 2