Product specification BD436 Features 1 EMITTER 2 COLLECTOR 3 BASE Medium Power Linear and Switching Applications Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage Parameter VCBO -32 V Collector-Emitter Voltage VCES -32 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5 V Collector Current (DC) IC -4 A Collector Current (Pulse) * ICP -7 A Base Current IB -1 A Collector Dissipation (TC=25 ) PC 36 W Junction Temperature TJ 150 Storage Temperature TSTG -65 to 150 * Pulse Test: PW=300ìs, duty Cycle=1.5% Pulsed Electrical Characteristics Ta = 25 Parameter Collector-Emitter Sustaining Voltage Symbol Testconditons Min Typ Max Unit V VCEO IC = -100mA, IB = 0 VBE(on) VCE = -1V, IC = -2A -1.1 Collector Cut-off Current ICBO VCB = -32V, IE = 0 -100 Collector Cut-off Current ICEO VCE = -32V, VBE = 0 -100 Emitter Cut-off Current IEBO VEB = -5V, IC = 0 Base-Emitter ON Voltage * VCE = -5V, IC = -10mA DC Current Gain * Collector-Emitter Saturation Voltage * Transition frequency hFE VCE(sat) fT -32 -1 85 VCE = -1V, IC = -500mA 85 VCE = -1V, IC = -2A 50 IC = -2A, IB = -0.2A VCE = -1V, IC = -250mA V A A mA 300 140 -0.2 3 -0.5 V MHz * Pulse Test: PW=300 s, duty Cycle=1.5% Pulsed http://www.twtysemi.com [email protected] 4008-318-123 1 of 1