UNITPOWER UM2601

UM2601
N-Ch and P-Ch Fast Switching MOSFETs
General Description
Product Summery
The UM2601 is the highest performance trench
N-ch and P-ch MOSFETs with extreme high cell
density , which provide excellent RDSON and gate
charge for most of the small power switching and
load switch applications.
The UM2601 meet the RoHS and Green Product
requirement with full function reliability approved.
BVDSS
RDS(ON)
ID
20V
18mΩ
7.2A
-20V
50mΩ
-4.5A
Applications
z High Frequency Point-of-Load Synchronous
Small power switching for MB/NB/UMPC/VGA
Features
z Networking DC-DC Power System
z Load Switch
z Advanced high cell density Trench technology
Dual SOP8 Pin Configuration
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
Absolute Maximum Ratings
Rating
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
1
1
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
P-Ch
Units
20
-20
V
±12
±12
V
7.2
-4.5
A
5.8
-3.6
A
35
-23
A
N-Ch
2
3
PD@TA=25℃
Total Power Dissipation
1.5
1.5
W
TSTG
Storage Temperature Range
-55 to 150
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
Thermal Data
Symbol
Parameter
Typ.
RθJA
Thermal Resistance Junction-ambient
RθJC
1
Thermal Resistance Junction-Case
1
1
Max.
Unit
---
85
℃/W
---
25
℃/W
UM2601
N-Ch and P-Ch Fast Switching MOSFETs
N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
VGS(th)
△VGS(th)
Static Drain-Source On-Resistance2
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Min.
Typ.
Max.
Unit
VGS=0V , ID=250uA
20
---
---
V
Reference to 25℃ , ID=1mA
---
0.024
---
V/℃
VGS=4.5V , ID=7A
---
15
18
VGS=2.5V , ID=5A
---
20
25
0.5
0.8
1.2
V
---
-3.58
---
mV/℃
VDS=16V , VGS=0V , TJ=25℃
---
---
1
VDS=16V , VGS=0V , TJ=55℃
---
---
5
VGS=VDS , ID =250uA
mΩ
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS=±12V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=5V , ID=7A
---
32.4
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.5
3
Ω
Qg
Total Gate Charge (4.5V)
---
11.4
16.0
Qgs
Gate-Source Charge
---
1.63
2.3
Qgd
Gate-Drain Charge
---
2.95
4.1
Td(on)
VDS=15V , VGS=4.5V , ID=7A
nC
---
4.8
9.6
Rise Time
VDD=10V , VGS=10V , RG=3.3Ω
---
61
110
Turn-Off Delay Time
ID=7A
---
28
56
Fall Time
---
8
16
Ciss
Input Capacitance
---
865
1211
Coss
Output Capacitance
---
86
120
Crss
Reverse Transfer Capacitance
---
72
101
Min.
Typ.
Max.
---
---
7.2
A
---
---
35
A
---
---
1.2
V
---
12.5
---
nS
---
4.4
---
nC
Tr
Td(off)
Tf
Turn-On Delay Time
uA
VDS=15V , VGS=0V , f=1MHz
ns
pF
Diode Characteristics
Symbol
Parameter
Conditions
1,4
IS
Continuous Source Current
ISM
Pulsed Source Current2,4
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25℃
IF=7A , dI/dt=100A/µs , TJ=25℃
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
Unit
UM2601
N-Ch and P-Ch Fast Switching MOSFETs
P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
VGS(th)
△VGS(th)
Static Drain-Source On-Resistance2
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Min.
Typ.
Max.
Unit
VGS=0V , ID=-250uA
-20
---
---
V
Reference to 25℃ , ID=-1mA
---
-0.014
---
V/℃
VGS=-4.5V , ID=-4A
---
40
50
VGS=-2.5V , ID=-1.5A
---
58
72
-0.5
-0.8
-1.2
V
---
3.95
---
mV/℃
VDS=-16V , VGS=0V , TJ=25℃
---
---
1
VDS=-16V , VGS=0V , TJ=55℃
---
---
5
VGS=VDS , ID =-250uA
mΩ
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS=±12V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-4A
---
12
---
S
Qg
Total Gate Charge (4.5V)
---
10
14.0
Qgs
Gate-Source Charge
---
1.93
2.7
Qgd
Gate-Drain Charge
---
3.18
4.5
VDS=-15V , VGS=-4.5V , ID=-4A
uA
nC
---
5.6
11.2
Rise Time
VDD=-10V , VGS=-4.5V , RG=3.3Ω
---
47.4
85
Turn-Off Delay Time
ID=-4A
---
31.6
63
Fall Time
---
17.2
34.4
Ciss
Input Capacitance
---
857
1200
Coss
Output Capacitance
---
114
160
Crss
Reverse Transfer Capacitance
---
108
151
Min.
Typ.
Max.
Unit
---
---
-4.5
A
---
---
-23
A
---
---
-1
V
---
19.7
---
nS
---
5.2
---
nC
Td(on)
Tr
Td(off)
Tf
Turn-On Delay Time
VDS=-15V , VGS=0V , f=1MHz
ns
pF
Diode Characteristics
Symbol
Parameter
Conditions
1,4
IS
Continuous Source Current
ISM
Pulsed Source Current
2,4
2
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25℃
IF=-4A , dI/dt=100A/µs , TJ=25℃
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
3
UM2601
N-Ch and P-Ch Fast Switching MOSFETs
N-Channel Typical Characteristics
32
35
ID=7A
VGS=5V
VGS=4.5V
25
28
VGS=3V
RDSON (mΩ)
ID Drain Current (A)
30
VGS=2.5V
20
24
15
VGS=1.8V
10
20
5
16
0
0
0.5
1
1.5
2
VDS , Drain-to-Source Voltage (V)
2.5
1
3
Fig.1 Typical Output Characteristics
2
3
VGS (V)
4
5
Fig.2 On-Resistance vs. Gate-Source
IS Source Current(A)
6
4
TJ=150℃
TJ=25℃
2
0
0
0.3
0.6
0.9
VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
1.8
Normalized On Resistance
1.8
1.4
Normalized VGS(th)
1.4
1.0
1
0.6
0.6
0.2
0.2
-50
0
50
100
-50
150
0
50
100
TJ , Junction Temperature (℃)
TJ ,Junction Temperature (℃ )
Fig.5 VGS(th) vs. TJ
Fig.6 Normalized RDSON vs. TJ
4
150
UM2601
N-Ch and P-Ch Fast Switching MOSFETs
1000
100.00
Ciss
Coss
100
1ms
10ms
ID (A)
Capacitance (pF)
100us
10.00
1.00
100ms
Crss
0.10
DC
o
TA=25 C
Single Pulse
F=1.0MHz
10
1
5
9
13
17
21
VDS , Drain to Source Voltage (V)
0.01
0.01
Fig.7 Capacitance
0.1
1
10
VDS (V)
100
Fig.8 Safe Operating Area
Normalized Thermal Response (RθJA)
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.01
P DM
0.01
T ON
T
D = TON/T
SINGLE
TJpeak = TC+P DMXRθJC
0.001
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
5
1000
UM2601
N-Ch and P-Ch Fast Switching MOSFETs
P-Channel Typical Characteristics
170
ID=4A
150
RDSON (mΩ)
130
110
90
70
50
30
1
Fig.1 Typical Output Characteristics
3
5
VGS (V)
7
9
11
Fig.2 On-Resistance vs. Gate-Source
-IS Source Current(A)
4
3
TJ=150℃
TJ=25℃
2
1
0
0
0.2
0.4
0.6
0.8
-VSD , Source-to-Drain Voltage (V)
1
Fig.3 Forward Characteristics of reverse
Fig.4 Gate-Charge Characteristics
1.8
Normalized On Resistance
1.8
1.4
Normalized VGS(th)
1.4
1.0
1
0.6
0.6
0.2
0.2
-50
0
50
100
150
-50
TJ ,Junction Temperature (℃ )
0
50
100
TJ , Junction Temperature (℃)
Fig.5 Normalized VGS(th) vs. TJ
Fig.6 Normalized RDSON vs. TJ
6
150
UM2601
N-Ch and P-Ch Fast Switching MOSFETs
1000
C (pF)
Ciss
Coss
100
Crss
F=1.0MHz
10
1
5
9
13
17
-VDS (V)
21
Fig.7 Capacitance
Fig.8 Safe Operating Area
Normalized Thermal Response (RθJA)
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.01
P DM
0.01
T ON
T
D = TON/T
TJpeak = TC+P DMXRθJC
SINGLE
0.001
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
7
1000