UM2601 N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The UM2601 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The UM2601 meet the RoHS and Green Product requirement with full function reliability approved. BVDSS RDS(ON) ID 20V 18mΩ 7.2A -20V 50mΩ -4.5A Applications z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA Features z Networking DC-DC Power System z Load Switch z Advanced high cell density Trench technology Dual SOP8 Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage 1 1 ID@TA=25℃ ID@TA=70℃ IDM Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current P-Ch Units 20 -20 V ±12 ±12 V 7.2 -4.5 A 5.8 -3.6 A 35 -23 A N-Ch 2 3 PD@TA=25℃ Total Power Dissipation 1.5 1.5 W TSTG Storage Temperature Range -55 to 150 -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC 1 Thermal Resistance Junction-Case 1 1 Max. Unit --- 85 ℃/W --- 25 ℃/W UM2601 N-Ch and P-Ch Fast Switching MOSFETs N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) △VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage VGS(th) Temperature Coefficient Min. Typ. Max. Unit VGS=0V , ID=250uA 20 --- --- V Reference to 25℃ , ID=1mA --- 0.024 --- V/℃ VGS=4.5V , ID=7A --- 15 18 VGS=2.5V , ID=5A --- 20 25 0.5 0.8 1.2 V --- -3.58 --- mV/℃ VDS=16V , VGS=0V , TJ=25℃ --- --- 1 VDS=16V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA mΩ IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=7A --- 32.4 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.5 3 Ω Qg Total Gate Charge (4.5V) --- 11.4 16.0 Qgs Gate-Source Charge --- 1.63 2.3 Qgd Gate-Drain Charge --- 2.95 4.1 Td(on) VDS=15V , VGS=4.5V , ID=7A nC --- 4.8 9.6 Rise Time VDD=10V , VGS=10V , RG=3.3Ω --- 61 110 Turn-Off Delay Time ID=7A --- 28 56 Fall Time --- 8 16 Ciss Input Capacitance --- 865 1211 Coss Output Capacitance --- 86 120 Crss Reverse Transfer Capacitance --- 72 101 Min. Typ. Max. --- --- 7.2 A --- --- 35 A --- --- 1.2 V --- 12.5 --- nS --- 4.4 --- nC Tr Td(off) Tf Turn-On Delay Time uA VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions 1,4 IS Continuous Source Current ISM Pulsed Source Current2,4 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 2 VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=7A , dI/dt=100A/µs , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 Unit UM2601 N-Ch and P-Ch Fast Switching MOSFETs P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) △VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage VGS(th) Temperature Coefficient Min. Typ. Max. Unit VGS=0V , ID=-250uA -20 --- --- V Reference to 25℃ , ID=-1mA --- -0.014 --- V/℃ VGS=-4.5V , ID=-4A --- 40 50 VGS=-2.5V , ID=-1.5A --- 58 72 -0.5 -0.8 -1.2 V --- 3.95 --- mV/℃ VDS=-16V , VGS=0V , TJ=25℃ --- --- 1 VDS=-16V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =-250uA mΩ IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-4A --- 12 --- S Qg Total Gate Charge (4.5V) --- 10 14.0 Qgs Gate-Source Charge --- 1.93 2.7 Qgd Gate-Drain Charge --- 3.18 4.5 VDS=-15V , VGS=-4.5V , ID=-4A uA nC --- 5.6 11.2 Rise Time VDD=-10V , VGS=-4.5V , RG=3.3Ω --- 47.4 85 Turn-Off Delay Time ID=-4A --- 31.6 63 Fall Time --- 17.2 34.4 Ciss Input Capacitance --- 857 1200 Coss Output Capacitance --- 114 160 Crss Reverse Transfer Capacitance --- 108 151 Min. Typ. Max. Unit --- --- -4.5 A --- --- -23 A --- --- -1 V --- 19.7 --- nS --- 5.2 --- nC Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions 1,4 IS Continuous Source Current ISM Pulsed Source Current 2,4 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ IF=-4A , dI/dt=100A/µs , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 3 UM2601 N-Ch and P-Ch Fast Switching MOSFETs N-Channel Typical Characteristics 32 35 ID=7A VGS=5V VGS=4.5V 25 28 VGS=3V RDSON (mΩ) ID Drain Current (A) 30 VGS=2.5V 20 24 15 VGS=1.8V 10 20 5 16 0 0 0.5 1 1.5 2 VDS , Drain-to-Source Voltage (V) 2.5 1 3 Fig.1 Typical Output Characteristics 2 3 VGS (V) 4 5 Fig.2 On-Resistance vs. Gate-Source IS Source Current(A) 6 4 TJ=150℃ TJ=25℃ 2 0 0 0.3 0.6 0.9 VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics 1.8 Normalized On Resistance 1.8 1.4 Normalized VGS(th) 1.4 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 -50 150 0 50 100 TJ , Junction Temperature (℃) TJ ,Junction Temperature (℃ ) Fig.5 VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 4 150 UM2601 N-Ch and P-Ch Fast Switching MOSFETs 1000 100.00 Ciss Coss 100 1ms 10ms ID (A) Capacitance (pF) 100us 10.00 1.00 100ms Crss 0.10 DC o TA=25 C Single Pulse F=1.0MHz 10 1 5 9 13 17 21 VDS , Drain to Source Voltage (V) 0.01 0.01 Fig.7 Capacitance 0.1 1 10 VDS (V) 100 Fig.8 Safe Operating Area Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.01 P DM 0.01 T ON T D = TON/T SINGLE TJpeak = TC+P DMXRθJC 0.001 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform 5 1000 UM2601 N-Ch and P-Ch Fast Switching MOSFETs P-Channel Typical Characteristics 170 ID=4A 150 RDSON (mΩ) 130 110 90 70 50 30 1 Fig.1 Typical Output Characteristics 3 5 VGS (V) 7 9 11 Fig.2 On-Resistance vs. Gate-Source -IS Source Current(A) 4 3 TJ=150℃ TJ=25℃ 2 1 0 0 0.2 0.4 0.6 0.8 -VSD , Source-to-Drain Voltage (V) 1 Fig.3 Forward Characteristics of reverse Fig.4 Gate-Charge Characteristics 1.8 Normalized On Resistance 1.8 1.4 Normalized VGS(th) 1.4 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 150 -50 TJ ,Junction Temperature (℃ ) 0 50 100 TJ , Junction Temperature (℃) Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 6 150 UM2601 N-Ch and P-Ch Fast Switching MOSFETs 1000 C (pF) Ciss Coss 100 Crss F=1.0MHz 10 1 5 9 13 17 -VDS (V) 21 Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.01 P DM 0.01 T ON T D = TON/T TJpeak = TC+P DMXRθJC SINGLE 0.001 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform 7 1000