US2409 P-Ch 20V Fast Switching MOSFETs General Description Product Summery The US2409 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The US2409 meet the RoHS and Green Product requirement with full function reliability approved. BVDSS RDS(ON) ID -20V 75mΩ -3.1A Applications z High Frequency Point-of-Load Synchronous s Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features z Advanced high cell density Trench technology SOT23 Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ±12 V ID@TA=25℃ Continuous Drain Current, VGS @ -4.5V1 -3.1 A ID@TA=70℃ 1 -2.5 A -15.5 A IDM Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current 2 3 PD@TA=25℃ Total Power Dissipation 1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC Thermal Resistance Junction-Case1 1 1 Typ. Max. Unit --- 125 ℃/W --- 80 ℃/W US2409 P-Ch 20V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -20 --- --- V Reference to 25℃ , ID=-1mA --- -0.01 --- V/℃ VGS=-4.5V , ID=-3A --- 60 75 VGS=-2.5V , ID=-2A --- 85 105 -0.5 -0.7 -1.2 V --- 2.98 --- mV/℃ VDS=-16V , VGS=0V , TJ=25℃ --- --- -1 VDS=-16V , VGS=0V , TJ=55℃ --- --- -5 VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-3A --- 9 --- S Qg Total Gate Charge (-4.5V) --- 9.7 13.6 Qgs Gate-Source Charge --- 2.05 2.9 Qgd Gate-Drain Charge --- 2.43 3.4 VDS=-15V , VGS=-4.5V , ID=-3A uA nC --- 4.8 9.6 Rise Time VDD=-10V , VGS=-4.5V , RG=3.3Ω --- 9.6 17.3 Turn-Off Delay Time ID=-3A --- 52 104 Fall Time --- 8.4 16.8 Ciss Input Capacitance --- 686 960 Coss Output Capacitance --- 90.8 127 Crss Reverse Transfer Capacitance --- 80.4 113 Min. Typ. Max. Unit --- --- -3.1 A --- --- -15.5 A --- --- -1 V --- 8.4 --- nS --- 3.3 --- nC Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM Parameter Conditions 1,4 Continuous Source Current 2,4 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ IF=-3A , dI/dt=100A/µs , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 US2409 P-Ch 20V Fast Switching MOSFETs Typical Characteristics 280 ID=-3A 240 RDSON (mΩ) 200 160 120 80 40 1 Fig.1 Typical Output Characteristics 3 5 -VGS (V) 7 9 11 Fig.2 On-Resistance vs. Gate-Source 6 -IS Source Current(A) 5 4 3 TJ=150℃ TJ=25℃ 2 1 0 0.00 0.30 0.60 0.90 1.20 -VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics 1.8 Normalized On Resistance 1.8 1.4 Normalized VGS(th) 1.4 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 150 -50 TJ ,Junction Temperature (℃ ) 0 50 100 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ Fig.5 Normalized VGS(th) vs. TJ 3 150 US2409 P-Ch 20V Fast Switching MOSFETs 1000 Capacitance (pF) Ciss Coss 100 Crss F=1.0MHz 10 1 5 9 13 17 21 -VDS , Drain to Source Voltage (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (R θJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM 0.001 TON SINGLE PULSE T D = TON/T TJpeak = TC + PDM x RθJC 0.0001 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform 4 1000