UNITPOWER US2423

US2423
P-Ch 20V Fast Switching MOSFETs
General Description
Product Summery
The US2423 is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
The US2423 meet the RoHS and Green Product
requirement with full function reliability approved.
BVDSS
RDS(ON)
ID
-20V
40mΩ
-4.2A
Applications
z High Frequency Point-of-Load Synchronous s
Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
Features
z Advanced high cell density Trench technology
SOT23 Pin Configuration
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
Absolute Maximum Ratings
Rating
Symbol
Parameter
VDS
Drain-Source Voltage
-20
V
VGS
Gate-Source Voltage
±8
V
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
10s
Units
1
-4.8
-4.2
A
1
-3.9
-3.4
A
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Steady State
2
-30
A
3
1.32
1
W
3
0.84
0.64
W
Total Power Dissipation
PD@TA=70℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
RθJA
RθJA
RθJC
Parameter
Thermal Resistance Junction-ambient
1
1
Thermal Resistance Junction-Ambient (t ≤10s)
1
Thermal Resistance Junction-Case
1
Typ.
Max.
Unit
---
125
℃/W
---
95
℃/W
---
80
℃/W
US2423
P-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
Static Drain-Source On-Resistance2
VGS(th)
Gate Threshold Voltage
Min.
Typ.
Max.
Unit
VGS=0V , ID=-250uA
-20
---
---
V
Reference to 25℃ , ID=-1mA
---
-0.014
---
V/℃
VGS=-4.5V , ID=-4A
---
32
40
VGS=-2.5V , ID=-2A
---
40
50
55
70
-0.3
-0.5
-1
V
---
2.3
---
mV/℃
VDS=-16V , VGS=0V , TJ=25℃
---
---
-1
VDS=-16V , VGS=0V , TJ=55℃
---
---
-5
VGS=-1.8V , ID=-1.5A
VGS=VDS , ID =-250uA
mΩ
△VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS=±8V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-4A
---
13.4
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
12
24
Ω
Qg
Total Gate Charge (-4.5V)
---
19.2
---
---
2.1
---
Gate-Drain Charge
---
4.6
---
Turn-On Delay Time
---
5
---
Qgs
Qgd
Td(on)
VDS=-15V , VGS=-4.5V , ID=-4A
Gate-Source Charge
uA
nC
Rise Time
VDD=-10V , VGS=-4.5V , RG=3.3Ω
---
55
---
Turn-Off Delay Time
ID=-4A
---
81
---
Fall Time
---
67
---
Ciss
Input Capacitance
---
1220
---
Coss
Output Capacitance
---
165
---
Crss
Reverse Transfer Capacitance
---
145
---
Min.
Typ.
Max.
Unit
---
---
-4.2
A
---
---
-30
A
Tr
Td(off)
Tf
VDS=-15V , VGS=0V , f=1MHz
ns
pF
Diode Characteristics
Symbol
IS
ISM
Parameter
Conditions
1,4
Continuous Source Current
2,4
Pulsed Source Current
2
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25℃
IF=-4A , dI/dt=100A/µs , TJ=25℃
---
---
-1
V
---
45
---
nS
---
15
---
nC
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
US2423
P-Ch 20V Fast Switching MOSFETs
Typical Characteristics
100
ID=-4A
RDSON (mΩ)
80
60
40
20
2
4
6
-VGS (V)
8
10
Fig.2 On-Resistance vs. Gate-Source
Fig.1 Typical Output Characteristics
-IS Source Current(A)
6
4
TJ=150℃
2
TJ=25℃
0
0
0.3
0.6
0.9
-VSD , Source-to-Drain Voltage (V)
Fig.4 Gate-Charge Characteristics
Fig.3 Forward Characteristics Of Reverse
1.8
Normalized On Resistance
1.8
Normalized VGS(th)
1.4
1.4
1
1.0
0.6
0.6
0.2
0.2
-50
0
50
100
150
-50
TJ ,Junction Temperature (℃ )
0
50
100
TJ , Junction Temperature (℃)
Fig.6 Normalized RDSON vs. TJ
Fig.5 Normalized VGS(th) vs. TJ
3
150
US2423
P-Ch 20V Fast Switching MOSFETs
10000
Capacitance (pF)
F=1.0MHz
1000
Ciss
Coss
100
Crss
10
1
5
9
13
17
21
-VDS , Drain to Source Voltage (V)
Fig.8 Safe Operating Area
Fig.7 Capacitance
Normalized Thermal Response (R θJA)
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
PDM
0.001
TON
SINGLE PULSE
T
D = TON/T
TJpeak = TC + PDM x RθJC
0.0001
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
4
1000