US2423 P-Ch 20V Fast Switching MOSFETs General Description Product Summery The US2423 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The US2423 meet the RoHS and Green Product requirement with full function reliability approved. BVDSS RDS(ON) ID -20V 40mΩ -4.2A Applications z High Frequency Point-of-Load Synchronous s Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features z Advanced high cell density Trench technology SOT23 Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ±8 V ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ 10s Units 1 -4.8 -4.2 A 1 -3.9 -3.4 A Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Steady State 2 -30 A 3 1.32 1 W 3 0.84 0.64 W Total Power Dissipation PD@TA=70℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol RθJA RθJA RθJC Parameter Thermal Resistance Junction-ambient 1 1 Thermal Resistance Junction-Ambient (t ≤10s) 1 Thermal Resistance Junction-Case 1 Typ. Max. Unit --- 125 ℃/W --- 95 ℃/W --- 80 ℃/W US2423 P-Ch 20V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -20 --- --- V Reference to 25℃ , ID=-1mA --- -0.014 --- V/℃ VGS=-4.5V , ID=-4A --- 32 40 VGS=-2.5V , ID=-2A --- 40 50 55 70 -0.3 -0.5 -1 V --- 2.3 --- mV/℃ VDS=-16V , VGS=0V , TJ=25℃ --- --- -1 VDS=-16V , VGS=0V , TJ=55℃ --- --- -5 VGS=-1.8V , ID=-1.5A VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±8V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-4A --- 13.4 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 12 24 Ω Qg Total Gate Charge (-4.5V) --- 19.2 --- --- 2.1 --- Gate-Drain Charge --- 4.6 --- Turn-On Delay Time --- 5 --- Qgs Qgd Td(on) VDS=-15V , VGS=-4.5V , ID=-4A Gate-Source Charge uA nC Rise Time VDD=-10V , VGS=-4.5V , RG=3.3Ω --- 55 --- Turn-Off Delay Time ID=-4A --- 81 --- Fall Time --- 67 --- Ciss Input Capacitance --- 1220 --- Coss Output Capacitance --- 165 --- Crss Reverse Transfer Capacitance --- 145 --- Min. Typ. Max. Unit --- --- -4.2 A --- --- -30 A Tr Td(off) Tf VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM Parameter Conditions 1,4 Continuous Source Current 2,4 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ IF=-4A , dI/dt=100A/µs , TJ=25℃ --- --- -1 V --- 45 --- nS --- 15 --- nC Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 US2423 P-Ch 20V Fast Switching MOSFETs Typical Characteristics 100 ID=-4A RDSON (mΩ) 80 60 40 20 2 4 6 -VGS (V) 8 10 Fig.2 On-Resistance vs. Gate-Source Fig.1 Typical Output Characteristics -IS Source Current(A) 6 4 TJ=150℃ 2 TJ=25℃ 0 0 0.3 0.6 0.9 -VSD , Source-to-Drain Voltage (V) Fig.4 Gate-Charge Characteristics Fig.3 Forward Characteristics Of Reverse 1.8 Normalized On Resistance 1.8 Normalized VGS(th) 1.4 1.4 1 1.0 0.6 0.6 0.2 0.2 -50 0 50 100 150 -50 TJ ,Junction Temperature (℃ ) 0 50 100 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ Fig.5 Normalized VGS(th) vs. TJ 3 150 US2423 P-Ch 20V Fast Switching MOSFETs 10000 Capacitance (pF) F=1.0MHz 1000 Ciss Coss 100 Crss 10 1 5 9 13 17 21 -VDS , Drain to Source Voltage (V) Fig.8 Safe Operating Area Fig.7 Capacitance Normalized Thermal Response (R θJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM 0.001 TON SINGLE PULSE T D = TON/T TJpeak = TC + PDM x RθJC 0.0001 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform 4 1000