Unitpower US2421 P-Ch 20V Fast Switching MOSFETs General Description Product Summery The US2421 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON -20V ID 43m -4A Applications The US2421 meet the RoHS and Green Product requirement with full function reliability approved. High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA Networking DC-DC Power System Features Load Switch SOT23 Pin Configuration Advanced high cell density Trench technology Super Low Gate Charge D Excellent Cdv/dt effect decline Green Device Available G Absolute Maximum Ratings S Symbol Parameter Rating Units VDS Drain-Source Voltage -20 V VGS Gate-Sou ce Voltage V 12 1 -4 A 1 -3.2 A -20 A Total Power Dissipation 1 W TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 ID@TA=25 ID@TA=70 IDM PD@TA=25 Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current 2 3 Thermal Data Symbol R R JA JC Parameter Thermal Resistance Junction-ambient Thermal Resistance Junction-Case 1 1 1 Typ. Max. Unit --- 125 /W --- 80 /W Unitpower US2421 P-Ch 20V Fast Switching MOSFETs Electrical Characteristics (TJ=25 Symbol BVDSS BVDSS RDS(ON) VGS(th) , unless otherwise noted) Parameter Conditions Drain-Source Breakdown Voltage TJ BVDSS Temperature Coefficient Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit -20 --- --- V --- -0.01 --- VGS=-4.5V , ID=-4A --- 34 43 VGS=-2.5V , ID=-1.5A --- 42 52 -0.5 -0.7 -1.2 --- 2.7 --- VDS=-16V , VGS=0V , TJ=25 --- --- -1 VDS=-16V , VGS=0V , TJ=55 --- --- -5 12V , VDS=0V --- --- 100 nA --- 18.7 --- S --- 17.8 25 --- 2.6 3.6 --- 4.3 6 --- 8 16 VGS=0V , ID=-250uA Reference to 25 VGS=VDS , ID =-250uA VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS gfs Forward Transconductance VDS=-5V , ID=-4A Qg Total Gate Charge (-4.5V) Qgs Gate-Source Charge Qgd Gate-Drain Charge Td(on) , ID=-1mA VDS=-15V , VGS=-4.5V , ID=-4A Turn-On Delay Time V/ m V mV/ uA nC Rise Time VDD=-10V , VGS=-4.5V , RG=1.2 --- 11 20 Turn-Off Delay Time ID=-4A --- 79 158 Fall Time --- 15 30 Ciss Input Capacitance --- 1440 2016 Coss Output Capacitance --- 165 230 Crss Reverse Transfer Capacitance --- 145 203 Min. Typ. Max. --- --- -4 A --- --- -20 A --- --- -1 V --- 10.7 --- nS --- 4.1 --- nC Tr Td(off) Tf VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge 2,4 Conditions 1,4 VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25 IF=-4A , dI/dt=100A/µs , TJ=25 Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width 300us , duty cycle 2% 3.The power dissipation is limited by 150 junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 Unit Unitpower US2421 P-Ch 20V Fast Switching MOSFETs Typical Characteristics 70 ID=-4A RDSON (m ) 60 50 40 30 1 Fig.1 Typical Output Characteristics 2 3 -VGS (V) 4 5 6 Fig.2 On-Resistance vs. Gate-Source 10 -IS Source Current(A) 8 6 TJ=150 TJ=25 4 2 0 0 0.2 0.4 0.6 0.8 1 -VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics 1.8 Normalized On Resistance 1.8 1.4 Normalized VGS(th) 1.4 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 TJ ,Junction Temperature ( 100 -50 150 0 50 100 TJ , Junction Temperature ( ) ) Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 3 150 Unitpower US2421 P-Ch 20V Fast Switching MOSFETs 10000 Capacitance (pF) Ciss 1000 Coss 100 Crss F=1.0MHz 10 1 5 9 13 17 -VDS , Drain to Source Voltage (V) 21 Fig.7 Capacitance Fig.8 Safe Operating Area 1 Normalized Thermal Response (R JA ) DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM 0.001 TON SINGLE PULSE T D = TON/T TJpeak = TC + PDM x R JC 0.0001 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform 4 1000