XINDEYI US2421

Unitpower
US2421
P-Ch 20V Fast Switching MOSFETs
General Description
Product Summery
The US2421 is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
BVDSS
RDSON
-20V
ID
43m
-4A
Applications
The US2421 meet the RoHS and Green Product
requirement with full function reliability approved.
High Frequency Point-of-Load Synchronous
Small power switching for MB/NB/UMPC/VGA
Networking DC-DC Power System
Features
Load Switch
SOT23 Pin Configuration
Advanced high cell density Trench technology
Super Low Gate Charge
D
Excellent Cdv/dt effect decline
Green Device Available
G
Absolute Maximum Ratings
S
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-20
V
VGS
Gate-Sou ce Voltage
V
12
1
-4
A
1
-3.2
A
-20
A
Total Power Dissipation
1
W
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
ID@TA=25
ID@TA=70
IDM
PD@TA=25
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
2
3
Thermal Data
Symbol
R
R
JA
JC
Parameter
Thermal Resistance Junction-ambient
Thermal Resistance Junction-Case
1
1
1
Typ.
Max.
Unit
---
125
/W
---
80
/W
Unitpower
US2421
P-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (TJ=25
Symbol
BVDSS
BVDSS
RDS(ON)
VGS(th)
, unless otherwise noted)
Parameter
Conditions
Drain-Source Breakdown Voltage
TJ BVDSS Temperature Coefficient
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Min.
Typ.
Max.
Unit
-20
---
---
V
---
-0.01
---
VGS=-4.5V , ID=-4A
---
34
43
VGS=-2.5V , ID=-1.5A
---
42
52
-0.5
-0.7
-1.2
---
2.7
---
VDS=-16V , VGS=0V , TJ=25
---
---
-1
VDS=-16V , VGS=0V , TJ=55
---
---
-5
12V , VDS=0V
---
---
100
nA
---
18.7
---
S
---
17.8
25
---
2.6
3.6
---
4.3
6
---
8
16
VGS=0V , ID=-250uA
Reference to 25
VGS=VDS , ID =-250uA
VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS
gfs
Forward Transconductance
VDS=-5V , ID=-4A
Qg
Total Gate Charge (-4.5V)
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Td(on)
, ID=-1mA
VDS=-15V , VGS=-4.5V , ID=-4A
Turn-On Delay Time
V/
m
V
mV/
uA
nC
Rise Time
VDD=-10V , VGS=-4.5V , RG=1.2
---
11
20
Turn-Off Delay Time
ID=-4A
---
79
158
Fall Time
---
15
30
Ciss
Input Capacitance
---
1440
2016
Coss
Output Capacitance
---
165
230
Crss
Reverse Transfer Capacitance
---
145
203
Min.
Typ.
Max.
---
---
-4
A
---
---
-20
A
---
---
-1
V
---
10.7
---
nS
---
4.1
---
nC
Tr
Td(off)
Tf
VDS=-15V , VGS=0V , f=1MHz
ns
pF
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
ISM
Pulsed Source Current
VSD
Diode Forward Voltage2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2,4
Conditions
1,4
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25
IF=-4A , dI/dt=100A/µs , TJ=25
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
300us , duty cycle
2%
3.The power dissipation is limited by 150
junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
Unit
Unitpower
US2421
P-Ch 20V Fast Switching MOSFETs
Typical Characteristics
70
ID=-4A
RDSON (m )
60
50
40
30
1
Fig.1 Typical Output Characteristics
2
3
-VGS (V)
4
5
6
Fig.2 On-Resistance vs. Gate-Source
10
-IS Source Current(A)
8
6
TJ=150
TJ=25
4
2
0
0
0.2
0.4
0.6
0.8
1
-VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
1.8
Normalized On Resistance
1.8
1.4
Normalized VGS(th)
1.4
1.0
1
0.6
0.6
0.2
0.2
-50
0
50
TJ ,Junction Temperature (
100
-50
150
0
50
100
TJ , Junction Temperature ( )
)
Fig.5 Normalized VGS(th) vs. TJ
Fig.6 Normalized RDSON vs. TJ
3
150
Unitpower
US2421
P-Ch 20V Fast Switching MOSFETs
10000
Capacitance (pF)
Ciss
1000
Coss
100
Crss
F=1.0MHz
10
1
5
9
13
17
-VDS , Drain to Source Voltage (V)
21
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
Normalized Thermal Response (R
JA )
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
PDM
0.001
TON
SINGLE PULSE
T
D = TON/T
TJpeak = TC + PDM x R JC
0.0001
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
4
1000