UD4306 N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The UD4306 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The UD4306 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. BVDSS RDSON ID 40V 8.5mΩ 65A -40V 15mΩ -48A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z CCFL Back-light Inverter z Advanced high cell density Trench technology z Super Low Gate Charge TO252 Pin Configuration z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Rating Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 40 -40 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM ±20 ±20 V 1 65 -48 A 1 50 -37 A 130 -100 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 190 262 mJ IAS Avalanche Current 47 -54 A 4 PD@TC=25℃ Total Power Dissipation 52.1 52.1 W TSTG Storage Temperature Range -55 to 150 -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ Thermal Data Symbol Parameter Max. Unit RθJA Thermal Resistance Junction-Ambient 1 Typ. --- 62 ℃/W RθJC Thermal Resistance Junction-Case1 --- 2.4 ℃/W 1 UD4306 N-Ch and P-Ch Fast Switching MOSFETs N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 40 --- --- V Reference to 25℃ , ID=1mA --- 0.034 --- V/℃ VGS=10V , ID=15A --- 7 8.5 VGS=4.5V , ID=12A --- 8 10 1.0 1.5 2.5 V --- -5.84 --- mV/℃ VDS=32V , VGS=0V , TJ=25℃ --- --- 1 VDS=32V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=15A --- 12 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.4 2.8 Ω Qg Total Gate Charge (4.5V) --- 28 --- Qgs Gate-Source Charge --- 7.85 --- Qgd Gate-Drain Charge --- 12.5 --- Td(on) VDS=20V , VGS=4.5V , ID=12A nC --- 20.2 --- Rise Time VDD=15V , VGS=10V , RG=3.3Ω --- 11.8 --- Turn-Off Delay Time ID=1A --- 84.8 --- Fall Time --- 8.6 --- Ciss Input Capacitance --- 3354 --- Coss Output Capacitance --- 275 --- Crss Reverse Transfer Capacitance --- 204 --- Min. Typ. Max. Unit 77.4 --- --- mJ Min. Typ. Max. Unit Tr Td(off) Tf Turn-On Delay Time uA VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=30A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD 2 Diode Forward Voltage VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ --- --- 65 A --- --- 130 A --- --- 1 V Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=47A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 UD4306 N-Ch and P-Ch Fast Switching MOSFETs P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -40 --- --- V Reference to 25℃ , ID=-1mA --- -0.023 --- V/℃ VGS=-10V , ID=-18A --- 12 15 VGS=-4.5V , ID=-12A --- 17 21 -1.0 -1.6 -2.5 V --- 4.74 --- mV/℃ VDS=-32V , VGS=0V , TJ=25℃ --- --- 1 VDS=-32V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-10V , ID=-18A --- 11 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 7 14 Ω Qg Total Gate Charge (-4.5V) --- 27.9 --- Qgs Gate-Source Charge --- 7.7 --- Qgd Gate-Drain Charge --- 7.5 --- Td(on) VDS=-20V , VGS=-4.5V , ID=-12A nC --- 40 --- Rise Time VDD=-15V , VGS=-10V , RG=3.3Ω, --- 35.2 --- Turn-Off Delay Time ID=-1A --- 100 --- Fall Time --- 9.6 --- Ciss Input Capacitance --- 3497 --- Coss Output Capacitance --- 323 --- Crss Reverse Transfer Capacitance --- 222 --- Min. Typ. Max. Unit 81 --- --- mJ Min. Typ. Max. Unit Tr Td(off) Tf Turn-On Delay Time uA VDS=-15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=-25V , L=0.1mH , IAS=-30A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD Diode Forward Voltage 2 VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ --- --- -48 A --- --- -100 A --- --- -1 V Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-54A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 3 UD4306 N-Ch and P-Ch Fast Switching MOSFETs N-Channel Typical Characteristics 8 12 ID=12A VGS=10V VGS=7V 8 7 VGS=5V RDSON (mΩ) ID Drain Current (A) 10 VGS=4.5V 6 6 VGS=3V 4 5 2 0 4 0 0.1 0.2 0.3 0.4 VDS , Drain-to-Source Voltage (V) 0.5 2 Fig.1 Typical Output Characteristics 8 10 10 ID=12A VGS Gate to Source Voltage (V) 10 8 6 TJ=150℃ 4 TJ=25℃ 2 0 0 0.2 0.4 0.6 0.8 VSD , Source-to-Drain Voltage (V) 8 6 4 2 0 0 1 Fig.3 Forward Characteristics of Reverse 15 30 45 QG , Total Gate Charge (nC) 60 Fig.4 Gate-Charge Characteristics 2.0 Normalized On Resistance 1.5 Normalized VGS(th) 6 VGS (V) Fig.2 On-Resistance vs. G-S Voltage 12 IS Source Current(A) 4 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature ( ℃) -50 150 0 50 100 TJ , Junction Temperature (℃) Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 4 150 UD4306 N-Ch and P-Ch Fast Switching MOSFETs 10000 1000.00 F=1.0MHz Capacitance (pF) 10us 100.00 Ciss 100us 1000 ID (A) 10.00 Coss Crss 100 10ms 100ms 1.00 DC 0.10 TC=25℃ Single Pulse 0.01 10 1 5 9 13 17 VDS , Drain to Source Voltage(V) 21 0.1 25 1 10 100 VDS (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.3 0.1 0.1 0.05 0.02 PDM 0.01 D = TON/T SINGLE PULSE 0.01 0.00001 TON 0.0001 T TJpeak = TC + PDM x RθJC 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Wave 5 UD4306 N-Ch and P-Ch Fast Switching MOSFETs \ P-Channel Typical Characteristics 18 12 ID=-12A VGS=-10V 8 16 RDSON (mΩ) -ID Drain Current (A) 10 VGS=-7V VGS=-5V 6 14 VGS=-4.5V 4 VGS=-3V 12 2 10 0 0 0.25 0.5 0.75 -VDS Drain-to-Source Voltage (V) 2 1 4 Fig.1 Typical Output Characteristics 6 8 -VGS (V) 10 Fig.2 On-Resistance v.s Gate-Source 12 10 VDS=-20V -VGS Gate to Source Voltage (V) -IS Source Current(A) 10 8 6 TJ=150℃ TJ=25℃ 4 2 0 0.2 0.4 0.6 0.8 ID=-12A 8 6 4 2 0 0 1 Fig.3 Forward characteristics of reverse 40 60 Fig.4 Gate-charge characteristics 2.0 Normalized On Resistance 1.5 Normalized -VGS(th) 20 QG , Total Gate Charge (nC) -VSD , Source-to-Drain Voltage (V) 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature ( ℃) -50 150 0 50 100 TJ , Junction Temperature (℃) Fig.5 Normalized VGS(th) v.s TJ Fig.6 Normalized RDSON v.s TJ 6 150 UD4306 N-Ch and P-Ch Fast Switching MOSFETs 10000 1000.00 F=1.0MHz 100.00 Capacitance (pF) Ciss 100us 1000 10.00 -ID (A) Coss 10ms 100ms DC 1.00 Crss 100 1ms 0.10 o Tc=25 C Single Pulse 0.01 10 1 5 9 13 17 -VDS Drain to Source Voltage(V) 21 0.1 25 1 -VDS (V) 10 100 Fig.8 Safe operating area Fig.7 Capacitance Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.3 0.1 0.1 0.05 0.02 PDM 0.01 D = TON/T SINGLE PULSE 0.01 0.00001 TON 0.0001 T TJpeak = TC + PDM x RθJC 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching time waveform Fig.11 Unclamped inductive waveform 7