UM2427 P-Ch 20V Fast Switching MOSFETs General Description Product Summery The UM2427 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The UM2427 meet the RoHS and Green Product requirement with full function reliability approved. BVDSS RDS(ON) ID -20V 9mΩ -10.7A Applications z Battery Switch z Networking DC-DC Power System z Load Switch Features z Advanced high cell density Trench technology SOP8 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z Green Device Available Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ±8 V ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ 10s Units 1 -14 -10.7 A 1 -11.2 -8.6 A Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Steady State 2 -60 A 3 2.5 1.5 W 3 1.6 0.94 W Total Power Dissipation PD@TA=70℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol RθJA RθJA RθJC Parameter Typ. Thermal Resistance Junction-Ambient 1 1 Thermal Resistance Junction-Ambient (t ≤10s) 1 Thermal Resistance Junction-Case 1 Max. Unit --- 85 ℃/W --- 50 ℃/W --- 24 ℃/W UM2427 P-Ch 20V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -20 --- --- V Reference to 25℃ , ID=-1mA --- -0.012 --- V/℃ VGS=-4.5V , ID=-10A --- 7.2 9 VGS=-2.5V , ID=-8A --- 9.5 11.5 VGS=-1.8V , ID=-6A VGS=VDS , ID =-250uA mΩ --- 12.5 15 -0.3 -0.5 -1.0 V --- 2.94 --- mV/℃ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current VDS=-20V , VGS=0V , TJ=25℃ --- --- 1 uA IGSS Gate-Source Leakage Current VGS=±8V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-10A --- 43 --- S Qg Total Gate Charge (-4.5V) --- 63 --- Qgs Gate-Source Charge --- 9.1 --- Qgd Gate-Drain Charge --- 13 --- Td(on) VDS=-15V , VGS=-4.5V , ID=-10A --- 15.8 --- Rise Time VDD=-10V , VGS=-4.5V , --- 76.8 --- Turn-Off Delay Time RG=3.3Ω, ID=-10A --- 193 --- Fall Time --- 186.4 --- Ciss Input Capacitance --- 5783 --- Coss Output Capacitance --- 509 --- Crss Reverse Transfer Capacitance --- 431 --- Min. Typ. Max. Unit --- --- -10.7 A --- --- -60 A Tr Td(off) Tf Turn-On Delay Time nC VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions 1,4 IS Continuous Source Current ISM Pulsed Source Current2,4 2 VG=VD=0V , Force Current VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V trr Reverse Recovery Time IF=-10A , dI/dt=100A/µs , --- 27 --- nS Qrr Reverse Recovery Charge TJ =25℃ --- 17.8 --- nC Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 UM2427 P-Ch 20V Fast Switching MOSFETs Typical Characteristics 20 ID=-14A RDSON (mΩ) 16 12 8 4 0 Fig.1 Typical Output Characteristics 1 3 -VGS (V) 4 5 Fig.2 On-Resistance vs. G-S Voltage -IS , Source Current (A) 12 9 TJ=150℃ TJ=25℃ 6 3 0 0 0.3 0.6 0.9 -VSD , Source-to-Drain Voltage (V) 1.2 Fig.3 Forward Characteristics of Reverse Fig.4 Gate-charge Characteristics 1.8 Normalized On Resistancs 1.8 1.4 Normalized -VGS(th) 1.4 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 Tj ,Junction Temperature ( ℃) -50 150 Fig.5 Normalized VGS(th) vs. TJ 0 50 100 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ 3 150 UM2427 P-Ch 20V Fast Switching MOSFETs 10000 Capacitance(pF) Ciss 1000 Coss Crss 100 F=1.0MHz 10 1 5 9 13 17 21 VDS Drain to Source Voltage(V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.1 0.01 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE PDM TON 0.001 D = TON/T T TJpeak = TA + PDM x RθJA 0.0001 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform 4 1000