WHXPCB AO4437

万和兴电子有限公司 www.whxpcb.com
AO4437
12V P-Channel MOSFET
General Description
Product Summary
The AO4437 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as a
load switch or in PWM applications. It is ESD protected.
VDS (V) = -12V
ID = -11 A (VGS = -4.5V)
RDS(ON) < 16mΩ (VGS = -4.5V)
RDS(ON) < 20mΩ (VGS = -2.5V)
RDS(ON) < 25mΩ (VGS = -1.8V)
ESD Rating: 4KV HBM
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current A
Pulsed Drain Current
B
Junction and Storage Temperature Range
Maximum Junction-to-Lead C
Alpha & Omega Semiconductor, Ltd.
±8
V
ID
-9
IDM
-20
W
2.1
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
A
3
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Units
V
-11
TA=70°C
TA=25°C
Power Dissipation A
Maximum
-12
RθJA
RθJL
Typ
31
63
21
°C
Max
40
75
30
Units
°C/W
°C/W
°C/W
AO4437
万和兴电子有限公司 www.whxpcb.com
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=-250µA, VGS=0V
-12
-1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-0.3
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-20
TJ=55°C
±1
µA
µA
16
VGS=-2.5V, ID=-10A
15.9
20
mΩ
VGS=-1.8V, ID=-6A
20.4
25
mΩ
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Gate resistance
A
21
Diode Forward Voltage
Rg
-1
17
Forward Transconductance
Output Capacitance
-0.55
12.4
TJ=125°C
gFS
Reverse Transfer Capacitance
µA
±10
VSD
Crss
-5
VDS=0V, VGS=±4.5V
VDS=-5V, ID=-11A
Coss
Units
VDS=0V, VGS=±8V
VGS=-4.5V, ID=-11A
Static Drain-Source On-Resistance
Max
V
VDS=-9.6V, VGS=0V
IDSS
RDS(ON)
Typ
38
-0.74
3960
VGS=0V, VDS=-6V, f=1MHz
mΩ
S
-1
V
-4.5
A
4750
pF
910
pF
757
pF
Ω
VGS=0V, VDS=0V, f=1MHz
6.9
8.5
37
47
VGS=-4.5V, VDS=-6V, ID=-11A
4.5
nC
SWITCHING PARAMETERS
Total Gate Charge
Qg
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
11
nC
tD(on)
Turn-On Delay Time
15
ns
tr
Turn-On Rise Time
43
ns
tD(off)
Turn-Off Delay Time
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Qrr
VGS=-4.5V, VDS=-6V, RL=0.55Ω,
RGEN=3Ω
158
ns
95
ns
IF=-11A, dI/dt=100A/µs
64
Body Diode Reverse Recovery Charge IF=-11A, dI/dt=100A/µs
50
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
Rev3: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO4437
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
20
-2.0V
VDS=-5V
-8.0V
8
6
-1.5V
10
-ID(A)
-ID (A)
15
125°C
4
VGS=-1.0V
25°C
5
2
0
0
0
0.2
0.4
0.6
0.8
1
0.2
0.4
-VDS (Volts)
Fig 1: On-Region Characteristics
1
1.2
1.4
Normalized On-Resistance
1.4
25
RDS(ON) (mΩ )
0.8
-VGS(Volts)
Figure 2: Transfer Characteristics
30
VGS=-1.8V
20
VGS=-2.5V
15
ID=-6A, VGS=-1.8V
ID=-10A, VGS=-2.5V
1.2
ID=-11A, VGS=-4.5V
1.0
VGS=-4.5V
10
0.8
0
2
4
6
8
10
0
25
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
40
1E+01
35
125°C
1E+00
30
ID=-11A
1E-01
25
-IS (A)
RDS(ON) (mΩ )
0.6
20
15
25°C
1E-02
1E-03
10
1E-04
125°C
25°C
5
1E-05
0
0.0
0
2
4
6
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
8
0.2
0.4
0.6
0.8
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AO4437
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
6400
5.00E+00
Capacitance (pF)
-VGS (Volts)
5600
VDS=-6V
ID=-11A
4.00E+00
3.00E+00
2.00E+00
Ciss
4800
4000
3200
2400
1600
1.00E+00
Coss
800
0.00E+00
Crss
0
0
5
10
15
20
25
30
35
40
45
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
15
20
40
TJ(Max)=150°C
TA=25°C
TJ(Max)=150°C
TA=25°C
10µs
100µs
10.0
30
Power (W)
-ID (Amps)
10
-VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
RDS(ON)
limited
5
1ms
10ms
1.0
0.1s
1s
20
10
10s
DC
0
0.001
0.1
0.1
1
10
100
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000