RoHS 2N6520 2N6520 D T ,. L TRANSISTOR (PNP) TO-92 FEATURES 1. EMITTER Power dissipation PCM : 0.625 2. BASE W (Tamb=25℃) 3. COLLECTOR Collector current ICM : -0.5 A Collector-base voltage V(BR)CBO : -350 V Operating and storage junction temperature range ELECTRICAL CHARACTERISTICS (Tamb=25℃ conditions MIN Ic= -100 µA , IE=0 -350 V R T Test V(BR)CBO C E L O unless otherwise specified) Symbol Collector-base breakdown voltage IC N TJ, Tstg: -55℃ to +150℃ Parameter C O 1 2 3 TYP MAX UNIT Collector-emitter breakdown voltage V(BR)CEO * IC= -1 mA , IB=0 -350 V Emitter-base breakdown voltage V(BR)EBO IE= -10 µA, IC=0 -5 V ICBO VCB= -250 V , IE=0 -0.05 µA IEBO VEB= -4 V , IC=0 -0.05 µA Collector cut-off current Emitter cut-off current J E DC current gain E hFE Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Base-emitter voltage VBE(on) W Transition frequency fT * VCE=-10 V, IC= -1 mA VCE=-10 V, IC= -10 mA VCE=-10 V, IC= -30 mA VCE=-10 V, IC= -50 mA VCE=-10 V, IC= -100 mA IC= -10 mA, IB= -1 mA IC= -20 mA, IB= -2 mA IC= -30 mA, IB= -3 mA IC= -50 mA, IB= -5 mA IC= -10 mA, IB= -1 mA IC= -20 mA, IB= -2 mA IC= -30 mA, IB= -3 mA 20 30 30 20 15 -0.3 -0.35 -0.5 -1 -0.75 -0.85 -0.9 VCE=-10V, IC= -100 mA VCE=-20 V, IC= -10 mA f =20 MHz 200 200 40 V V -2 V 200 MHz * Pulse test, Pulse width≤300µs, Duty cycle≤2%. WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]