WINNERJOIN 2N6520

RoHS
2N6520
2N6520
D
T
,. L
TRANSISTOR (PNP)
TO-92
FEATURES
1. EMITTER
Power dissipation
PCM : 0.625
2. BASE
W (Tamb=25℃)
3. COLLECTOR
Collector current
ICM : -0.5
A
Collector-base voltage
V(BR)CBO : -350
V
Operating and storage junction temperature range
ELECTRICAL CHARACTERISTICS (Tamb=25℃
conditions
MIN
Ic= -100 µA , IE=0
-350
V
R
T
Test
V(BR)CBO
C
E
L
O
unless otherwise specified)
Symbol
Collector-base breakdown voltage
IC
N
TJ, Tstg: -55℃ to +150℃
Parameter
C
O
1 2 3
TYP
MAX
UNIT
Collector-emitter breakdown voltage
V(BR)CEO
*
IC= -1 mA , IB=0
-350
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -10 µA, IC=0
-5
V
ICBO
VCB= -250 V , IE=0
-0.05
µA
IEBO
VEB= -4 V , IC=0
-0.05
µA
Collector cut-off current
Emitter cut-off current
J
E
DC current gain
E
hFE
Collector-emitter saturation voltage
VCE(sat)
Base-emitter saturation voltage
VBE(sat)
Base-emitter voltage
VBE(on)
W
Transition frequency
fT
*
VCE=-10 V, IC= -1 mA
VCE=-10 V, IC= -10 mA
VCE=-10 V, IC= -30 mA
VCE=-10 V, IC= -50 mA
VCE=-10 V, IC= -100 mA
IC= -10 mA, IB= -1 mA
IC= -20 mA, IB= -2 mA
IC= -30 mA, IB= -3 mA
IC= -50 mA, IB= -5 mA
IC= -10 mA, IB= -1 mA
IC= -20 mA, IB= -2 mA
IC= -30 mA, IB= -3 mA
20
30
30
20
15
-0.3
-0.35
-0.5
-1
-0.75
-0.85
-0.9
VCE=-10V, IC= -100 mA
VCE=-20 V, IC= -10 mA
f =20 MHz
200
200
40
V
V
-2
V
200
MHz
* Pulse test, Pulse width≤300µs, Duty cycle≤2%.
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