RoHS 2SB624 D T ,. L TRANSISTOR (PNP) SOT-23-3L FEATURES 1. BASE Power dissipation 3. COLLECTOR W (Tamb=25℃) TJ, Tstg: -55℃ to +150℃ Parameter Collector-base breakdown voltage C E L Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current E Emitter cut-off current O N Test conditions MIN UNIT V V(BR)CEO Ic= -1 mA, IB=0 -25 V V(BR)EBO IE= -100 µA, IC=0 -5 V ICBO VCB=-30 V , IE=0 -0.1 µA IEBO VEB= -5V , -0.1 µA IC=0 110 hFE(2)* VCE=-1V, IC= -700mA 50 Collector-emitter saturation voltage VCE(sat) * IC=-700 mA, IB= -70mA Base-emitter voltage VBE(on) * VCE=-6V, IC=-10mA -0.6 Transition frequency fT VCE= -6V, IC= -10mA 140 W MAX -30 VCE= -1V, IC= -100mA J E TYP Ic=-100µA, IE=0 V(BR)CBO hFE(1)* DC current gain 1. 60¡ À0. 05 0. 35 IC 2. 80¡ À0. 05 unless otherwise specified) R T Symbol C 0. 95¡ À0. 025 Collector current ICM: -0.7 A Collector-base voltage V(BR)CBO: -30 V Operating and storage junction temperature range ELECTRICAL CHARACTERISTICS (Tamb=25℃ O 1. 02 0.2 1. 9 PCM: 2. EMITTER 2. 92¡ À0. 05 2SB624 400 -0.6 V -0.7 V MHz * Pulse test : Pulse width ≤350µs,Duty Cycle≤2%. CLASSIFICATION OF hFE(1) Marking Range BV1 BV2 BV3 BV4 BV5 110-180 135-220 170-270 200-320 250-400 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]